IRFP354 Allicdata Electronics
Allicdata Part #:

IRFP354-ND

Manufacturer Part#:

IRFP354

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 450V 14A TO-247AC
More Detail: N-Channel 450V 14A (Tc) 190W (Tc) Through Hole TO-...
DataSheet: IRFP354 datasheetIRFP354 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 190W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 350 mOhm @ 8.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Drain to Source Voltage (Vdss): 450V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IRF354 MOSFET is a widely used power semiconductor device due to its low cost, low on-state resistance and its high voltage rating. In this article we will explore the IRF354\'s application field and its operating principle.

The IRF354 is most commonly used in P-channel, surface mount, power switch applications. Popular applications for the IRF354 includes motor control, dc/dc converters, load switching and power supply circuits. Being a P-channel MOSFET, it is often combined with its N-channel counterpart to form H-bridges for single-phase motor control circuits. It is also a popular choice for load-control circuits because of its low on-state resistance.

The IRF354 is a depletion-mode FET with a maximum drain-to-source voltage rating of 30V and a maximum drain current of 8A. It has a low on-state drain resistance of 0.008 ohms. This makes it a good choice for applications that require high current switching, such as motor control and load-switching circuits. The device is also capable of receiving extremely high peak currents if the duty cycle is high and the pulse width is short.

The IRF354\'s application field also includes voltage-controlled circuits, where the device acts as an analog switch. According to its datasheet, the gate-to-source voltage required to turn the device on starts at 2V and continues to increase with drain current. When operating in voltage-controlled mode, the gate-to-source voltage should never exceed the supply voltage. This ensures that the drain-to-source junction never reaches the breakdown voltage.

Now that we have discussed the application field of the IRF354, let’s move on to its working principle. MOSFETs, like the IRF354, are voltage-controlled devices, meaning their current flow from the source to the drain is proportional to the voltage applied to the gate. The IRF354 is an enhancement-mode device, meaning that the gate-to-source voltage requires a minimum of 2V to start turning on and 4V to reach full drain current. Non-inverting logic and ground-referencing techniques are often used to reduce the gate-to-source voltage.

The IRF354 has two main operating modes, enhancement and depletion mode. In enhancement mode, the drain current is controlled by the gate-to-source voltage applied to the gate. As the gate-to-source voltage increases, the drain current increases. In depletion mode, the drain current is controlled by the gate-to-source voltage applied to the gate. As the gate-to-source voltage decreases, the drain current increases.

The IRF354 is an ideal solution for a wide variety of applications due to its robust design, low on-state resistance, and ease of use. It is a popular choice for automotive, medical, industrial, and consumer applications due to its reliable performance. The device offers excellent switching speed and can easily handle high peak currents. It can also be used in analog circuits as an analog switch.

The specific data is subject to PDF, and the above content is for reference

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