Allicdata Part #: | IRFP4110PBF-ND |
Manufacturer Part#: |
IRFP4110PBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 100V 120A TO-247ACN-Channel 100V 120A ... |
More Detail: | N/A |
DataSheet: | IRFP4110PBF Datasheet/PDF |
Quantity: | 853 |
Series: | HEXFET® |
Packaging: | Bulk |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 120A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 4.5 mOhm @ 75A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Power - Max: | -- |
Gate Charge (Qg) (Max) @ Vgs: | 210nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 9620pF @ 50V |
FET Feature: | -- |
Power Dissipation (Max): | 370W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-247AC |
Package / Case: | TO-247-3 |
Base Part Number: | -- |
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IRFP4110PBF is an advanced N-Channel MOSFET produced by International Rectifier Corp. It is a single power MOSFET that offers a wide range of cost effective, low on-resistance and high power switching features. This article discusses the application fields, and working principle of IRFP4110PBF.
Application Field
IRFP4110PBF is mainly used in controlling the power supply from DC power sources, such as batteries or AC power supplies. It is particularly useful for applications where high current is to be switched. For example, it is frequently used in power converters, DC motor drives and switching power supplies, where extremely high currents have to be switched quickly and efficiently. Additionally, the device can handle peak currents up to 8A.
The IRFP4110PBF is also well suited for other switching applications, such as voltage regulation, over-voltage protection, open drain circuits and load switching.
Working Principle
IRFP4110PBF is a single N-Channel enhancement mode MOSFET. This means that it comprises of three terminals: gate, source, and drain. The gate terminal is the control element of the MOSFET and it is used to control the current flow in the device. When a voltage is applied to the gate terminal, it will induce a current in the channel between the source and drain, allowing the current to flow easily from the source to the drain. This is known as the “enhancement mode” of the device.
The drain current can be adjusted by changing the gate voltage. At the same time, the device has the characteristic of very low on-resistance. This makes it ideal for efficiently controlling power supply in both DC and AC circuits. The device is also ideal for applications where power dissipation is a concern.
The IRFP4110PBF is also designed to deliver high switching speed and low gate energy. This is because it has a low threshold voltage, which makes it possible to switch at much higher speeds than other MOSFETs.
Conclusion
In conclusion, the IRFP4110PBF is an advanced single N-Channel enhancement mode MOSFET that offers a wide range of cost effective, low on-resistance and high power switching features. It is most commonly used in controlling the power supply from DC power sources, such as batteries or AC power supplies. The device is also capable of handling peak currents up to 8A and is ideal for applications where power dissipation is a concern due to its low on-resistance characteristics. Additionally, the device has the advantage of delivering high switching speed and low gate energy.
The specific data is subject to PDF, and the above content is for reference
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