| Allicdata Part #: | IRFP448-ND |
| Manufacturer Part#: |
IRFP448 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 500V 11A TO-247AC |
| More Detail: | N-Channel 500V 11A (Tc) 180W (Tc) Through Hole TO-... |
| DataSheet: | IRFP448 Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-247-3 |
| Supplier Device Package: | TO-247-3 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 180W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1900pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 84nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 600 mOhm @ 6.6A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 11A (Tc) |
| Drain to Source Voltage (Vdss): | 500V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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IRFP448 is a type of Insulated-Gate Field-Effect Transistor (FET) that is specially designed for power switching applications. It is manufactured by International Rectifier (IR), one of the leading companies in the FET industry. The IRFP448 is a single-package field effect transistor that provides high current and low-voltage capabilities. It is available in most popular package sizes, including TO-220 and SOT-223. The device features a low RDS(on), high power dissipation capability, and fast switching speeds. This makes it an ideal choice for power switching applications where reliability, power efficiency, and speed are important.
The IRFP448 has a drain-source current rating of 30 Amps at 25C and a voltage rating of 100V continuous. It has a gate-source voltage rating of ±20V and a drain-source breakdown voltage of 500V. The power dissipation of this device is typically up to 100W at 25C. It has an insulated-gate voltage rating of 25V, which makes it suitable for a variety of high-voltage applications. The device is also characterized for being able to handle transient surges up to 500 Amps.
The IRFP448 is constructed using a metal-oxide-semiconductor field-effect transistor (MOSFET). Its structure consists of a floating gate, a control gate, and a source-drain channel. The floating gate is the portion of the device where the control-gate voltage is applied, while the source-drain channel is the portion of the device between the two electrodes. The MOSFET is made out of a single-crystal silicon substrate, which is used because of its excellent electrical characteristics. The substrate is heavily doped with impurities which provide the MOSFET with its electrical characteristics.
When the voltage between the gate and the source is below the threshold voltage, no current flows in the device. However, when the voltage exceeds the threshold voltage, electrons start to flow from the source to the drain and a current flows from the drain to the source. This current can be used to control devices such as motors, relays, LEDs, solenoids, and others. The current passing through the device depends on the voltage applied between the gate and the source.
The IRFP448 is commonly used in switching power supplies, such as DC-DC converters, AC-DC converters, and motor control. It is also used in DC motor controllers, LED lighting, and H-bridge configurations. It is commonly used in automotive applications such as fuel-injection systems and powertrain control systems. Since it is a relatively low-cost device, it is used in many consumer electronics such as cell phones, laptop computers, game consoles, and others.
In a nutshell, the IRFP448 is a type of Insulated-Gate Field-Effect Transistor (FET) that is specially designed for power switching applications. It is characterized for its low RDS(on), high power dissipation capability, and fast switching speeds. Its most popular applications include switching power supplies, H-bridge configurations, DC motor controllers, and LED lighting. The device is also widely used in many consumer electronics such as cell phones, laptop computers, and game consoles.
The specific data is subject to PDF, and the above content is for reference
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IRFP448 Datasheet/PDF