| Allicdata Part #: | IRFP460APBF-ND |
| Manufacturer Part#: |
IRFP460APBF |
| Price: | $ 2.99 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 500V 20A TO-247AC |
| More Detail: | N-Channel 500V 20A (Tc) 280W (Tc) Through Hole TO-... |
| DataSheet: | IRFP460APBF Datasheet/PDF |
| Quantity: | 3610 |
| 1 +: | $ 2.99000 |
| 10 +: | $ 2.90030 |
| 100 +: | $ 2.84050 |
| 1000 +: | $ 2.78070 |
| 10000 +: | $ 2.69100 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-247-3 |
| Supplier Device Package: | TO-247-3 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 280W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 3100pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 105nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 270 mOhm @ 12A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 20A (Tc) |
| Drain to Source Voltage (Vdss): | 500V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The Infineon Technologies IRFP460APBF is part of a family of high current, high speed switch mode power transistors that are produced by the world-renowned semiconductor manufacturer. This particular device is a specifically designed to switch faster and carry higher currents than its standard counterpart, the IRFP460. It is able to drive high current loads while also providing a logic level input. This makes it an ideal choice in a wide variety of applications.
The IRFP460APBF belongs to a family of metal-oxide-semiconductor field-effect transistors (MOSFETs). MOSFETs are three-terminal devices which feature a metal source, metal drain and a semiconductor channel that connects the source to the drain. They are known for their low input capacitance, low on-state resistance, and fast switching times.
The IRFP460APBF is a single N-channel enhancement-mode device. It uses a power metal-gate electrode. This device is terminated with a kelvin bond pad to allow for better current flow. The drain source voltage (VDS) supported by the IRFP460APBF is 500V with a continuous drain current (ID) of 80A. It has a maximum junction temperature of 175°C and its drain-source breakdown voltage is rated at 60V.
The IRFP460APBF is a versatile device and can be used in a wide range of applications. It has found its way into motor control, digital switching and other power management applications. It is frequently used as a switch in high power devices, such as welding robots, high-power charging systems and computer power supplies. Additionally, it can be used as a switch in high-frequency power converters, as well as audio amplifiers.
The working principle of the IRFP460APBF is relatively simple. When the input voltage is applied to the gate of the transistor, a current is induced between the source and the drain. This induces a voltage between the source and the drain, thus allowing the current to flow through the transistor. The higher the input voltage, the higher the current flow, resulting in a faster switching time.
Generally speaking, the IRFP460APBF is a reliable and versatile device capable of delivering high power and current switching performance. It is adept at handling high current loads and can easily be used in a wide range of applications. Compatible with logic level input, it makes an ideal choice for many motor control applications, digital switching tasks, and other power management profiles.
The specific data is subject to PDF, and the above content is for reference
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IRFP460APBF Datasheet/PDF