IRFP460LC

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IRFP460LC is a N-Channel Enhancement Mode MOSFET with a Drain-Source voltage of 200V and a maximum Drain-Source Current of 130A -- making it perfect for a myriad of uses requiring high current and high voltages.

The construction of the device itself is based upon a Fifth High-Side MOSFET (FHMOSFET) technology which makes it an ideal component for applications such as power supply, DC-DC converters, charger for battery backup systems, radio transmitters and other related applications.

The way that the FHMOSFET technology works can be broken down into four key principles; Active Region Scaling, Threshold Voltage Scaling, Source-Drain Punch Through Reduction, and Current Sharing.

The first, and perhaps most important, principle is Active Region Scaling, which is the scaling of the MOSFET\'s active region, or channel. This process is necessary to increase the absolute drain current output due to the reduction in the length of the transistor\'s active region. This scaling of the device\'s active region is achieved by decreasing the transistor\'s overall size, which results in higher current densities.

The second principle, Threshold Voltage Scaling, is the process of reducing the MOSFET\'s threshold voltage, which is the voltage required to turn the transistor\'s channel on. The lower the threshold voltage is, the more current can be passed through the device due to the increased number of active carriers in the transistor. This principle is integral, as the device\'s threshold voltage is a key factor in determining its overall performance.

The third principle, Source-Drain Punch Through Reduction, addresses the issue of the device\'s drain current leakage which can occur due to the overlap of the source-drain junctions in MOSFETs. This is solved by utilizing shallow trench isolation technology, as this provides better spacing between the source and drain junctions, thus reducing the leakage current in the device.

The fourth, and final, principle that is involved in the FHMOSFET technology is Current Sharing. This allows for increased transistor current output due to the parallel combination of the FHMOSFET transistors. This is hugely beneficial, as it provides higher current outputs than standard MOSFET transistors with the same size.

Overall, IRFP460LC is thus a powerful MOSFET that is capable of providing high current and voltage capabilities due to its FHMOSFET technology. This allows it to be used in a variety of applications, such as power supply, DC-DC converters, chargers, radio transmitters, and other related applications. It is an extremely valuable tool for anyone looking to implement such components into their designs.

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