| Allicdata Part #: | IRFP460NPBF-ND |
| Manufacturer Part#: |
IRFP460NPBF |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 500V 20A TO-247AC |
| More Detail: | N-Channel 500V 20A (Tc) 280W (Tc) Through Hole TO-... |
| DataSheet: | IRFP460NPBF Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 5V @ 250µA |
| Package / Case: | TO-247-3 |
| Supplier Device Package: | TO-247-3 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 280W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 3540pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 124nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 240 mOhm @ 12A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 20A (Tc) |
| Drain to Source Voltage (Vdss): | 500V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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IRFP460NPBF is an N-Channel enhancement mode power field effect transistor (FET). It can switch up to 88A and 42V which is sufficient to drive a significant load. It has very low drain-source On-resistance which makes this transistor ideal for current control and power switching applications. The IRFP460NPBF is mainly used in DC/DC converters, power management circuits, motor control systems and LED lighting.
The basic structure of an IRFP460NPBF is quite simple. The transistor has four connectors, the drain, source, body and gate. The drain is the output of the transistor, and when the voltage connected to it is pulled down, the drain-source channel of the transistor is opened and current flows. The source is the opposite of the drain and serves as the input of the transistor. The source is grounded and the voltage applied to it will determine the voltage the drain will be at. The body is completely electrically isolated from the other three connectors and can be connected to a separate current source. Finally, the gate is where the control voltage is applied and the switching of the transistor is controlled by this voltage.
The working principle of an IRFP460NPBF is also quite simple. When a positive voltage is applied to the gate, the electric field produced creates a conducting channel between the drain and the source. Current is then allowed to flow from the source to the drain, thus allowing the transistor to be used as a switch. The higher the positive gate voltage, the stronger the electric field created, the greater the current allowed to flow and the lower the resistance between the source and the drain. The voltage applied to the gate is usually referred to as the threshold voltage and when the applied voltage is lower than the threshold voltage, the electric field created is unable to create a conducting channel and current will not flow. This is known as the cut-off state of the transistor and this shows why the IRFP460NPBF is able to serve as a switch.
The IRFP460NPBF is a versatile and powerful transistor that is used in many applications and is highly valued for its low On-resistance and high voltage capability. Because of its low price, this transistor is an excellent choice for those who are looking for a cost-effective solution for their applications. The IRFP460NPBF is an ideal choice for high-power switching and current control needs.
The specific data is subject to PDF, and the above content is for reference
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IRFP460NPBF Datasheet/PDF