IRFP470 Allicdata Electronics
Allicdata Part #:

IRFP470-ND

Manufacturer Part#:

IRFP470

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 500V 24A TO-247AD
More Detail: N-Channel 500V 24A (Tc) 300W (Tc) Through Hole TO-...
DataSheet: IRFP470 datasheetIRFP470 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-3P-3 Full Pack
Supplier Device Package: TO-247AD
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 300W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
Series: MegaMOS™
Rds On (Max) @ Id, Vgs: 230 mOhm @ 12A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The IRFP470 is an enhancement-mode MOSFET featuring a maximum drain source voltage of 400V and a continuous drain current of 97A. It is available in a three-terminal to-220AB package with an exposed drain lead for better thermal performance. The fourth lead is electrically isolated from the drain lead and is also electrically separate from the source and gate terminals. The IRFP470 is intended for use as an amplifier, motor and load switch in power management applications, as well as a transistor and a logic gate in logic applications.

IRFP470 Application Fields

The IRFP470 can be used in a variety of applications, including: power amplifiers, power regulators, motor controllers, and load switches. Its wide range of voltage, current, and thermal ratings make it suitable for a variety of power management applications. It can also be used in logic and switching applications such as: microprocessors, integrated circuits, communication circuits, switching audio connections and other digital control functions. Additionally, it can be used in solenoid and relay control circuits.

Working Principle of IRFP470

The IRFP470 works on the principle of enhancement-mode field effect transistors (MOSFET). It consists of a source terminal, drain terminal, and a gate terminal. When a positive voltage is applied to the gate terminal, electrons are attracted from the source terminal. This creates a negatively charged region in the substrate, which enhances the current flow between the source and drain terminals. This effect is known as the pinch-off effect and makes the IRFP470 useful in controlling current flow. The higher the voltage on the gate terminal, the greater the current flow.

The IRFP470 provides good power performance and thermal stability, making it ideal for use in applications where high-power and/or high-current switching is required. It also provides excellent immunity to EMI and is suitable for use in applications that are exposed to EMI. In addition, the device has low RDS (on) values and low turn-on and turn-off times, making it suitable for use in fast switching applications.

The IRFP470 is an ideal choice for power management and control applications. Its wide range of voltage, current, and thermal ratings make it suitable for a variety of power management applications. Additionally, its low RDS(on) value, combined with its high-speed switching capability, make it ideal for use as an amplifier, motor, load switch, transistor, and logic gate.

The specific data is subject to PDF, and the above content is for reference

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