IRFPC48 Allicdata Electronics
Allicdata Part #:

IRFPC48-ND

Manufacturer Part#:

IRFPC48

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 600V 8.9A TO-247AC
More Detail: N-Channel 600V 8.9A (Tc) 170W (Tc) Through Hole TO...
DataSheet: IRFPC48 datasheetIRFPC48 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 170W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 820 mOhm @ 5.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 8.9A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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IRFPC48 Application Field and Working Principle

IRFPC48 is a type of metal oxide semiconductor field effect transistor (MOSFET). It belongs to the class of single-gate Field Effect Transistors (FETs). FETs are considered to be one of the most common types of transistors currently available. They provide excellent electrical performance, low on-resistance and require low gate-source voltage for reliable operation. In this article, a closer look will be taken at the IRFPC48 application field and working principle.

Applications

The IRFPC48 transistor has an array of different applications, including use in power supply circuits and motor control systems. It is especially suitable for power management in portable devices that require a low power system, such as Mobile Devices and notebook computers.

The IRFPC48 transistor is also used in other types of circuit design, such as high-frequency switching applications. It provides a low input impedance and low output impedance, which makes it ideal for use in low-power circuit applications that require high performance.

Working Principle

The IRFPC48 transistor works on the same principle as all FETs. It contains two layers of metal oxide, which act as the gate and source of the transistor. This arrangement provides high input impedance and low output impedance. The gate terminal of the transistor is responsible for the conduction of the current, and is completely insulated from the source terminal.

The transistor is operated in the depletion mode, which is controlled by the gate-source voltage. When no voltage is applied to the gate, the transistor is in the ‘off state’ and will not conduct. When the gate voltage is applied, the transistor is ‘on’ and will allow current to flow between the source and drain.

The MOSFET transistor can also be operated in the enhancement mode by applying a negative gate voltage. In this mode, the transistor allows most of the current to flow between the source and drain. This can be useful for high-frequency switching and low-power applications.

Conclusion

The IRFPC48 transistor is a single-gate FET that is suitable for a range of applications, including power management in portable devices, high-frequency switching, and low-power circuit applications. Its working principle is based on the arranged layers of metal oxide, which act as the gate and source of the transistor. Depending on the gate voltage applied, the transistor can either be ‘on’ or ‘off,’ thus allowing current to flow between the source and drain.

The specific data is subject to PDF, and the above content is for reference

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