| Allicdata Part #: | IRFPC50A-ND |
| Manufacturer Part#: |
IRFPC50A |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 600V 11A TO-247AC |
| More Detail: | N-Channel 600V 11A (Tc) 180W (Tc) Through Hole TO-... |
| DataSheet: | IRFPC50A Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-247-3 |
| Supplier Device Package: | TO-247-3 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 180W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2100pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 70nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 580 mOhm @ 6A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 11A (Tc) |
| Drain to Source Voltage (Vdss): | 600V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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The IRFPC50A is a low-voltage field effect transistor, commonly referred to as a FET. It is a type of MOSFET, which short for Metal-Oxide Semiconductor Field Effect Transistor, that has a single gate structure with a very low on-state resistance. It is specifically used in power management applications, such as switching relays and controlling motor current, although it has a wide range of uses.
The IRFPC50A is made of silicon and features an n-channel junction field effect (JFET). This allows the device to exhibit low noise and very high frequency application. It is a low-cost and efficient solution for applications requiring high switching speed, low temperature rise, and very low power loss. It is also highly resistant to electrical and thermal stress, making it suitable for applications requiring a long life cycle.
The IRFPC50A works by using a gate voltage to control the flow of electrons from the drain to the source. The gate voltage is supplied by an external power source and the current is controlled by the threshold gate voltage, which is the minimum voltage needed for an increase in the current flow. When the gate voltage reaches the threshold voltage, the current begins to flow, allowing electrons to move through the channel of the MOSFET. The current then reaches a maximum level and is limited by the drain voltage. This is referred to as the on-state resistance, which is very low in this device.
The IRFPC50A also has a good linearity and low harmonic distortion, which are important factors in power management and can be used to accurately control the power output. It also features a low standby current, which is important in device power conservation. It can be used in high power applications such as induction heaters, microwave ovens, and even electric baking ovens.
The IRFPC50A is primarily used in switching relays, which are used to control motors or other operational devices. The device is triggered by input from a signal or another power source, allowing it to open or close the switch to control the current flow. This is done through the gate voltage, which is adjustable so that it can be set at the desired level. The device is also used in medical electronics, automobile electronics, and lighting control.
The IRFPC50A is a versatile device that can be used in a variety of applications. Its low on-state resistance and low standby current make it a great choice for power management applications. Its low harmonic distortion and good linearity make it suitable for use in many different applications. It is a reliable and cost-effective solution to many electronics requirements.
The specific data is subject to PDF, and the above content is for reference
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IRFPC50A Datasheet/PDF