Allicdata Part #: | IRFPC50LCPBF-ND |
Manufacturer Part#: |
IRFPC50LCPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 600V 11A TO-247AC |
More Detail: | N-Channel 600V 11A (Tc) 190W (Tc) Through Hole TO-... |
DataSheet: | IRFPC50LCPBF Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 190W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2300pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 84nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 600 mOhm @ 6.6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 11A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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IRFPC50LCPBF is a single N-channel, enhancement mode vertical DMOSFET semiconductor device. It is designed primarily to meet the requirements of high efficiency switching and linear applications. This MOSFET is constructed using an advanced vertical DMOS architecture with excellent power and gain performance features. It features lower susceptibility to noise and is ideal for use in various applications. This device offers outstanding power handling and surge capability as well as fast switching speeds and low on state resistance.
The main application field of IRFPC50LCPBF is power management and power conversion. It finds its use in power line communications, inverters, motor control, switched-mode power supplies, LED drivers and power supplies, DC-DC converters and other related applications. It can also be used in automotive systems and tools, industrial control systems, military and aerospace applications and other fields.
The IRFPC50LCPBF features two isolated P-D regions which offers improved immunity to ESD and latchup. The power handling and surge capability of this MOSFET are quite impressive and it features an extremely low on-state resistance, making it particularly well suited to power conversion applications. The switching speed is also quite fast, meaning it can switch large current loads with minimum losses. Due to its low on-state resistance it can also be used in high efficiency converters.
The working principle of IRFPC50LCPBF is quite simple. When the gate voltage increases, the MOSFET increases its conductivity and the current increases according to the applied gate voltage. As the gate voltage is increased even more, the MOSFET eventually reaches a plateau where the current stops increasing and this is called the “Saturation Region”. The gate voltage also needs to be taken into account when designing the gate driver for this type of MOSFET, as it is important that the gate voltage is not higher than what the MOSFET can handle. The features of this MOSFET make it suitable for applications where the need arises for high power handling and low power consumption.
In conclusion, the IRFPC50LCPBF is a single N-channel, enhancement mode vertical DMOSFET semiconductor device. It is designed primarily to meet the requirements of high efficiency switching and linear applications and finds its use in power line communications, inverters, motor control, switched-mode power supplies, LED drives and power supplies, DC-DC converters and other related applications. Its low on-state resistance and fast switching speeds make it ideal for power conversion applications and its high power handling and surge capability make it an excellent choice for applications that require high power handling and low power consumption. The working principle of this MOSFET is quite simple, and its features make it an ideal choice for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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