Allicdata Part #: | IRFPG40PBF-ND |
Manufacturer Part#: |
IRFPG40PBF |
Price: | $ 3.82 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 1000V 4.3A TO-247AC |
More Detail: | N-Channel 1000V 4.3A (Tc) 150W (Tc) Through Hole T... |
DataSheet: | IRFPG40PBF Datasheet/PDF |
Quantity: | 478 |
1 +: | $ 3.47760 |
10 +: | $ 3.10716 |
100 +: | $ 2.54803 |
500 +: | $ 2.06330 |
1000 +: | $ 1.74014 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 150W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1600pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 120nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 3.5 Ohm @ 2.6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 4.3A (Tc) |
Drain to Source Voltage (Vdss): | 1000V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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IRFPG40PBF is a single N channel MOSFET which is ideal for use in low voltage applications and other switching applications due to its fast switching capability and noise-free operation. IRFPG40PBF is developed and manufactured by Infineon Technologies.
The IRFPG40PBF is a type of MOSFET, a type of transistor, which is used in many electronic designs. The MOSFET has two terminals, the source and the drain, and the control gate. When voltage is applied to the control gate, it causes current to flow from the source to drain, which is referred to as switching.
The IRFPG40PBF is a N channel MOSFET and therefore conducts electricity in only one direction.It has a maximum drain-source voltage of 40V and the drain current is limited to 2.8A. It also has an extremely fast switching speed with a low turn-on time of 10nS and a low turn-off time of 8nS. It also does not have any noticeable noise due to its low temperature coefficient of 233mV/ ˚C and high level of heat dissipation.
The IRFPG40PBF can be used in a variety of applications, due to its fast switching capability and noise-free operation. It is widely used in high-frequency power supply circuits, battery-powered electronic applications, switching regulators, current source circuits and Interface circuits. It can also be used in audio power amplification, servo amplifiers and motor control circuits.
The IRFPG40PBF has a metal oxide semiconductor structure with a Gate oxide layer of 1.5nm. This ensures a low on-state resistance which allows it to handle high power loads with ease.The gate-source capacitance is only 6pF and the gate-drain capacitance is 8pF, both of which reduce switching losses and improve circuit performance.
Another advantage of the IRFPG40PBF is its high immunity to voltage transients. It has a high breakdown voltage of 170V and a low multiplier of 100uA/V,which increases its reliability and prevents over-voltage conditions from damaging the circuit. Furthermore, the low on-state resistance reduces voltage spikes, providing further protection.
In conclusion, the IRFPG40PBF is a great choice for a variety of low-voltage applications and other switching applications due to its fast switching capability and noise-free operation. Its gate-source capacitance is low, which reduces switching losses and improves circuit performance. It also has a high breakdown voltage and high immunity to voltage transients, making it reliable and resistant to over-voltage conditions. The IRFPG40PBF is an ideal choice for battery-powered electronic applications, switching regulators, current source circuits and Interface circuits.
The specific data is subject to PDF, and the above content is for reference
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