IRFPS37N50A Allicdata Electronics
Allicdata Part #:

IRFPS37N50A-ND

Manufacturer Part#:

IRFPS37N50A

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 500V 36A SUPER247
More Detail: N-Channel 500V 36A (Tc) 446W (Tc) Through Hole SUP...
DataSheet: IRFPS37N50A datasheetIRFPS37N50A Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-274AA
Supplier Device Package: SUPER-247 (TO-274AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 446W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 5579pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 130 mOhm @ 22A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The IRFPS37N50A is a power metal–oxide–semiconductor field-effect transistor (MOSFET) from International Rectifier\'s Power MOSFET family. These power MOSFET devices are designed for high-performance power switching and amplifier applications. They offer a wide range of operating temperature capabilities, allowing for efficient thermal management.

The IRFPS37N50A device is housed in a TO-247 package. Its typical applications consist of motor control, On/Off control, switching regulation, and resonant converter control. Due to its enhanced features, it can be used in low-side synchronous buck, half-bridge and full-bridge applications.

The IRFPS37N50A is a N-Channel MOSFET which has a 130W Continuous Drain Current rating. It is characterized by a low RDS(on) of 0.0037Ω and a Drain-Source Voltage rating of 55V. This device also has a maximum Transconductance rating of910 mS and a capacitance Drain-Source rating of 173pF. It maintains a high-critical speed of 34MHz which is important for device switching applications.

In terms of operation voltage, the IRFPS37N50A has a gate-source voltage rating of +/-20V, with an On-Resistance of 0.0037Ω. It is capable of providing an excellent current handling capability of up to 150A. The thermal resistance is of approximately 2.6K/W, allowing for great heat dissipation.

The IRFPS37N50A has a dual diode between the drain and source of the device. This diode helps in maintaining a low inductance between the source amd drain of the device and therefore, helps in switching applications such as High-side synchronous buck, half-bridge, and full-bridge.

The IRFPS37N50A provides excellent switching preformance with a maximum drain-source on-resistance (RDSon). This low RDSon helps the device in providing the best possible power efficiency. It is capable of operating with very low on-resistance and very low gate-charge.

In terms of power dissipation, the IRFPS37N50A is capable of dissipating up to 195W of power, making it perfect for applications requiring high power levels. Additionally, its high operating temperature range makes it suitable for thermal management purposes. This is especially helpful when used in more demanding applications, such as motor control, On/Off control, switching regulation, and resonant converter control.

The IRFPS37N50A is a power MOSFET device characterized by its excellent switching and power efficiency. With its low RDSon and high-critical frequency, the IRFPS37N50A is the ideal solution for high-power switching, amplifier applications, and motor control. Its high-temperature operation is perfect for thermal management purposes, allowing for great heat dissipation.

The specific data is subject to PDF, and the above content is for reference

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