IRFZ48RPBF Allicdata Electronics
Allicdata Part #:

IRFZ48RPBF-ND

Manufacturer Part#:

IRFZ48RPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 60V 50A TO-220AB
More Detail: N-Channel 60V 50A (Tc) 190W (Tc) Through Hole TO-2...
DataSheet: IRFZ48RPBF datasheetIRFZ48RPBF Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 190W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 18 mOhm @ 43A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IRFZ48RPBF is an advanced field-effect transistor (FET), specifically designed as metal oxide semiconductor field effect transistor (MOSFET) with a single gate. This miniature device is designed for use in all kinds of power switching applications. It is optimized to reduce switching losses and is suited for high current and high-power applications.

The IRFZ48RPBF is a n-channel enhancement switch capable of dissipating up to 570 watts of power. It has a three-terminal gate configuration and is available in surface mount and through-hole packages. The surface mount version has a drain-gate overlap of 0.25mm and the through-hole version has a drain-gate overlap of 0.2mm.

The IRFZ48RPBF is specifically designed for use in power application, making it ideal for applications such as switching power amplifiers, high frequency power converters, motor drives and other power applications. As a result, its applications are limited to the power electronics world. It is also useful for linear power control applications such as dimming lights or industrial automation applications.

In terms of its working principle, the IRFZ48RPBF is a drain-controlled, enhancement-mode MOSFET. This means that the switching operation of the IRFZ48RPBF is controlled by the gate voltage relative to the source voltage. When the gate-to-source voltage is lower than a certain threshold voltage, the device acts as an open switch, allowing the current to flow freely between the drain and the source. When the gate-to-source voltage is greater than the threshold voltage, the device switches on, effectively allowing the current to flow from the drain to the source.

The main advantage of the IRFZ48RPBF is its low threshold voltage. This means that the device can be switched on with a relatively small gate voltage, making it very efficient for power applications. The device also has a low-on resistance and can handle very high current levels. This makes it ideal for high power applications.

The IRFZ48RPBF is also very popular for its robust construction. It is designed for effective thermal management, meaning it is able to dissipate heat effectively and can withstand thermally-induced stress. It is also very reliable in its operation, with a very low failure rate.

Overall, the IRFZ48RPBF is an excellent choice for power application, especially when used in combination with appropriate power control circuits. It is easy to use and can handle high currents and power levels. Its low switching voltage and reliable construction make it an attractive choice for power makers.

The specific data is subject to PDF, and the above content is for reference

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