IRFZ34NSTRR

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IRFZ34NSTRR is a type of field effect transistor (FET) device, particularly an enhancement-mode Metal–Oxide–Semiconductor Field Effect Transistor (MOSFET). The IRFZ34NSTRR is an N channel MOSFET designed as a power MOSFET device for use in applications such as switching regulators, switching converters, motor drivers, solenoid drivers and other power switching applications.

The IRFZ34NSTRR has a Drain-Source breakdown voltage of 30V, a Drain-Source On-state resistance of 4.7 ohms, and a Gate-Source threshold voltage of 5.3V. It is capable of delivering up to 62A of continuous drain current and peak values up to 110A. The maximum drain-source voltage is ±100V and its maximum power dissipation is 320W. The temperature range of the IRFZ34NSTRR is -55ºC to 175ºC, with a maximum junction temperature of 175ºC.

The IRFZ34NSTRR is an N industry standard transistor with a wide variety of uses. It is used in motor drivers, H-bridge motor control systems, switching regulators, power switching applications, battery chargers and switching converters, among other applications. This MOSFET also has great compatibility with current controllers or drivers, as they are designed with a low gate threshold voltage.

The key component to the IRFZ34NSTRR is the metal oxide semiconductor (MOS) field effect transistor. This is a type of three-terminal device that is specifically used to control electric current flow. MOSFETs operate on the principle of controlling the electric field between the metal gate and the semiconductor channel of the device. The metal gate acts as a switch to control the flow of current through the channel by the application of a voltage from the gate terminal.

The IRFZ34NSTRR has a wide variety of operating and design features that enable users to optimize the performance of the device. Its low on-state resistance combined with its low gate threshold voltage have allowed the development of efficient and low power switching applications. Additionally, its large drain-source voltage range has allowed manufacturers to use the device in applications that require high voltage operation.

The IRFZ34NSTRR is a popular device for power MOSFET applications. Its high current carrying capacity, wide range of operating features, and low on-state resistance make it an ideal choice for many high power applications. Additionally, its low gate threshold voltage ensures compatibility with current controllers and drivers.

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