| Allicdata Part #: | IRG7T200HF12B-ND |
| Manufacturer Part#: |
IRG7T200HF12B |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOD IGBT 1200V 200A POWIR 62 |
| More Detail: | IGBT Module Half Bridge 1200V 400A 1060W Chassis ... |
| DataSheet: | IRG7T200HF12B Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Part Status: | Obsolete |
| IGBT Type: | -- |
| Configuration: | Half Bridge |
| Voltage - Collector Emitter Breakdown (Max): | 1200V |
| Current - Collector (Ic) (Max): | 400A |
| Power - Max: | 1060W |
| Vce(on) (Max) @ Vge, Ic: | 2.2V @ 15V, 200A |
| Current - Collector Cutoff (Max): | 2mA |
| Input Capacitance (Cies) @ Vce: | 22.4nF @ 25V |
| Input: | Standard |
| NTC Thermistor: | No |
| Operating Temperature: | -40°C ~ 150°C (TJ) |
| Mounting Type: | Chassis Mount |
| Package / Case: | POWIR® 62 Module |
| Supplier Device Package: | POWIR® 62 |
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IRG7T200HF12B Application Field and Working Principle
The IRG7T200HF12B is part of an extended range of insulated gate bipolar transistors (IGBTs) produced by the STMicroelectronics Corporation. This particular device is a planar type IGBT, rated at 200A / 2.2kV, making it suitable for use in power applications, where active and reliable power control and switching is required.
IGBTs are a combination of both bipolar junction transistor (BJT) and field-effect transistor (FET) technology, forming a device which offers high current capacity, low power dissipation, high reliability, and fast switching speeds. The IRG7T200HF12B employs a standard 650V device rated IGBT cell in the center, which is surrounded by a driver circuit and protection circuitry on either side. The driver circuit is responsible for controlling the switching of the IGBT, while the protection circuitry provides overcurrent and overtemperature protection. This combination of technologies provides a highly efficient, reliable, and cost-effective solution for power switching applications, such as motor control and power factor correction.
The IRG7T200HF12B is a high voltage, high current device, with a maximum blocking voltage of 2.2 kV and a maximum on-state current of 200A. The device is available with optional external gate protection, allowing the user to limit gate-source leakage current and reduce potential gate-source voltage overshoot due to external triggering, as well as optional external high speed diode clamps, which allow for extremely fast turn-on/turn-off switching and reduce the possibility of damaging the device with voltage surges.
The IRG7T200HF12B can be used in a wide range of power applications, including motor control, automotive power conversion, general power switching, and power factor correction. For motor control applications, the device can be used to drive large powr motors and generators, allowing for extremely accurate speed, torque, and position control. For automotive applications, IRG7T200HF12B devices are often used for power conversion and the driving of the electric vehicle’s motor, providing extremely efficient power control and switching. In general power applications, the device can be employed for power supply conversion, lighting, and general power switching. And finally, in power factor correction applications, the device can be used to ensure that the power factor in an AC system remains stable, and is not affected by changes in the load.
In summary, the IRG7T200HF12B is an extremely powerful and reliable IGBT, capable of handling high current and voltage levels in a variety of power applications. Its combination of advanced circuit technology, protection circuitry, and fast switching speeds makes it an ideal choice for any power application where accuracy, reliability, and cost-effectiveness are a priority.
The specific data is subject to PDF, and the above content is for reference
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IRG7T200HF12B Datasheet/PDF