IRG7CH75K10EF-R

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IGBTs – Single

IGBTs (Insulated Gate Bipolar Transistors) are power transistors that are used in a wide range of applications, particularly in the industrial, automotive, and commercial sectors. The IRG7CH75K10EF-R is one such IGBT, and it is designed to optimize electrical performance in applications that require high levels of voltage, power, and switching speed. This article will provide an overview of the IRG7CH75K10EF-R’s application field and working principle.

Application Field

The IRG7CH75K10EF-R is an IGBT optimized for high-voltage, high-power applications, such as motor drives and welding inverters. It is also suitable for applications that require high-speed switching and high power density, such as motor control and switching power supplies. Furthermore, it is well-suited to high-current, low-loss applications, such as solar inverters and solar cell switching power supplies.

The IRG7CH75K10EF-R can operate over a wide range of voltages, with a maximum operating voltage of 650V and a peak repetitive reverse voltage of 700V. It can also handle large amounts of power, with a maximum drain-source on-state voltage of 650V and a continuous drain current of 73A. The device is rated for a power loss of 9.68W at 25°C and a peak reverse voltage of 600V.

Working Principle

The IRG7CH75K10EF-R is an N-channel vertical field-effect transistor (FET) that uses both voltage and current to control the flow of electricity from source to drain. In this device, current is controlled using an insulated gate, and voltage is controlled using a bipolar junction transistor. The bipolar junction transistor (BJT) is formed from two junctions of alternating n-type and p-type semiconductor material connected in series. The gate is routed between the n-type and p-type portions of the BJT and is insulated by a dielectric material. Owing to its unique design, the IRG7CH75K10EF-R can be used to control large amounts of power while still allowing for high-speed switching.

When the gate voltage is increased, electrons are attracted to the gate by the increased electric field, and the transistor acts as a closed switch. This allows the current to flow from source to drain. When the gate voltage is decreased, the number of electrons attracted to the gate decreases, and the field-effect transistor (FET) acts as an open switch, preventing the current from flowing. The IRG7CH75K10EF-R has a high gate threshold voltage of 3.7V, which helps to ensure precise switching performance.

Conclusion

The IRG7CH75K10EF-R is an IGBT optimized for high-voltage, high-power applications. It is commonly used in motor drives and welding inverters, as well as high-current, low-loss applications such as solar inverters and solar cell switching power supplies. The device operates over a wide range of voltages and can handle large amounts of power due to its high-power density and low power loss. It also has a high gate threshold voltage of 3.7V, which helps to ensure precise switching performance. In conclusion, the IRG7CH75K10EF-R is an ideal choice for a wide range of high-voltage and high-power applications.

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