IRLI2203NPBF Allicdata Electronics
Allicdata Part #:

IRLI2203NPBF-ND

Manufacturer Part#:

IRLI2203NPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 30V 61A TO220FP
More Detail: N-Channel 30V 61A (Tc) 47W (Tc) Through Hole TO-22...
DataSheet: IRLI2203NPBF datasheetIRLI2203NPBF Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 1V @ 250µA
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220AB Full-Pak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 47W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 25V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 4.5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 7 mOhm @ 37A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The IRLI2203NPBF is a single-channel, enhancement-type, P-channel power MOSFET with extremely low Figaro resistance. It is designed specifically for use in modern portable applications that require high current and high speed switching. The device has the capability to handle 200 mA gate current and features an integrated ESD protection circuit making it ideal for portable applications. This device is mostly used in switched-mode power supplies and motor control applications.

The IRLI2203NPBF is a MOSFET device, meaning it is made up of three distinct components: a source, a drain, and a channel. The source and drain are metallic contacts, whereas the channel is a non-metallic, semiconductor material. The source and drain are connected to a power source and when a variable (such as voltage or current) is applied to the gate terminal, the voltage or current also flows from the source to the drain through the channel. This is how the MOSFET amplifies and switches signals.

The IRLI2203NPBF is an enhancement-type MOSFET, meaning it requires a gate voltage to be above the threshold voltage in order to turn on. This is why the MOSFET is mainly used to switch on and off a circuit. The MOSFET has an “on” resistance of 4.3 ohms, is capable of handling 200 mA gate current, and has a breakdown voltage of 31 volts. The performance of the MOSFET relies heavily on the quality and reliability of the materials used to construct the device.

The IRLI2203NPBF can be used in a variety of different applications due to its small size and ease of use. As discussed earlier, it is primarily used in switched-mode power supplies and motor control applications. It is also used in a variety of other analog and digital circuits such as power amplifiers, radio tuners, audio amplifiers and other specialized applications. Additionally, the IRLI2203NPBF is used to construct Logic Level Converters due to its low “on” resistance and high current capability.

In conclusion, the IRLI2203NPBF is a single-channel, enhancement-type, P-channel power MOSFET device with a very low “on” resistance. It is designed specifically for modern portable applications and features an integrated ESD protection circuit. The device is ideal for a variety of analog and digital circuits such as power amplifiers, radio tuners, audio amplifiers, switched-mode power supplies, motor control applications and more. Its small size and ease of use make it a perfect choice for a variety of electrnonic applications.

The specific data is subject to PDF, and the above content is for reference

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