Allicdata Part #: | IRLIZ24G-ND |
Manufacturer Part#: |
IRLIZ24G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 60V 14A TO220FP |
More Detail: | N-Channel 60V 14A (Tc) 37W (Tc) Through Hole TO-22... |
DataSheet: | IRLIZ24G Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | TO-220-3 Full Pack, Isolated Tab |
Supplier Device Package: | TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 37W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 870pF @ 25V |
Vgs (Max): | ±10V |
Gate Charge (Qg) (Max) @ Vgs: | 18nC @ 5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 100 mOhm @ 8.4A, 5V |
Drive Voltage (Max Rds On, Min Rds On): | 4V, 5V |
Current - Continuous Drain (Id) @ 25°C: | 14A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IRLIZ24G is a MOSFET designed for high current and low voltage switching applications. It is a single N-channel enhancement mode MOSFET device with a low gate threshold voltage and a very high current capability. This device is ideal for applications such as power distribution, audio power amplifiers, and motor control. It is important to understand the working principle of the IRLIZ24G before using it in any application.
The IRLIZ24G is a enhancement mode MOSFET, meaning that it is turned on when a voltage above its threshold voltage is applied to the gate terminal. The Gate-Source voltage (VGS) is equal to the voltage across the gate terminal and the source terminal. When this voltage is above the specified threshold voltage of the MOSFET, a channel is generated in the MOSFET which allows the electrons to flow from the source to the drain. Thus, the current flow is controlled by the Gate-Source voltage.
Moreover, the IRLIZ24G utilizes a vertical double diffusion MOS technology known as VDMOS which provides excellent ruggedness, high avalanche and short circuit protection, and high current capability. This technology is also responsible for the very low gate threshold voltage (Vth) and the high peak pulsed current capability.
In addition to its high current and low voltage ratings, the IRLIZ24G offers a wide range of features like a low on-resistance, a low thermal resistance, a low capacitance, a fast switching speed, a wide linear range, and a high frequency operation. Moreover, these features are combined with a low value gate charge that helps reduce switching losses and improve the efficiency of the power devices. As a result, this device is well suited for high current, low voltage, and high frequency applications.
To conclude, the IRLIZ24G MOSFET is a highly efficient device due to its low gate threshold voltage and very high current capability. Features like its low on-resistance, low thermal resistance, low capacitance, and fast switching speed make it an ideal choice for high current and low voltage switching applications. As a result, the IRLIZ24G has wide applications in power distribution, audio power amplifiers, and motor control.
The specific data is subject to PDF, and the above content is for reference
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IRLIZ34NPBF | Infineon Tec... | -- | 1303 | MOSFET N-CH 55V 22A TO220... |
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