IRLI520GPBF

Vgs(th) (Max) @ Id:	2V @ 250µA
Package / Case:	TO-220-3 Full Pack, Isolated Tab
Supplier Device Package:	TO-220-3
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	37W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	490pF @ 25V
Vgs (Max):	±10V
Gate Charge (Qg) (Max) @ Vgs:	12nC @ 5V
Series:	--
Rds On (Max) @ Id, Vgs:	270 mOhm @ 4.3A, 5V
Drive Voltage (Max Rds On, Min Rds On):	4V, 5V
Current - Continuous Drain (Id) @ 25°C:	7.2A (Tc)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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The IRLI520GPBF, which stands for International Rectifier Low VCE(SAT) Advanced Process 45V 5A Dual N-Channel MOSFET, is a type of transistor used to control and amplify electrical signals in a circuit. An IRLI520GPBF is a type of field-effect transistor (FET) known as a MOSFET, which stands for metal-oxide semiconductor field-effect transistor. It is a single N-channel device, meaning that it has an N-type drain (d), source (s), and gate (g) rather than both N-type and P-type.The IRLI520GPBF differs from other FETs and MOSFETs due to its low on-state impedance, advanced process, 45 volts breakdown voltage, and 5 amps continuous drain current. This low on-state resistance allows devices like this to serve as a switch and not a resistor. This makes the device ideally suited for power electronics such as switching power supplies, amplifiers, and audio equipment. The IRLI520GPBF is designed with a Gate-Source Threshold Voltage of 4.5V. This allows the device to switch from the "on" state to the "off" state quickly. Its power switching and regular switching can handle a continuous drain current at 25°C up to 5A, although the device\'s maximum peak drain current of 16A occur when the temperature reaches 25°C. The device can work with a working voltage from -100V to +45V, meaning it can handle a power range of 145V. Thus, due to its low on-state impedance, advanced process, 45 volts breakdown voltage, and 5 amps continuous drain current, the IRLI520GPBF can be used in a variety of ways, with applications such as AC-DC and DC-DC power supplies, battery chargers, amplifiers, and audio equipment.The working principles of the IRLI520GPBF is quite simple. When a voltage is applied to the Gate, a current flow is established between the Source and the Drain. This current is responsible for the device\'s high switching speed, which is the main advantage of using the IRLI520GPBF. As the gate voltage is increased, the current increases and the voltage between the source and drain drops. When the gate voltage is decreased, the current also decreases and the voltage between the source and drain rises. The IRLI520GPBF is designed with enhanced fast switching capabilities, allowing it to switch between the "on" and "off" state quickly. This means that the IRLI520GPBF can be used to control powerful electrical signals with great precision. Furthermore, with its low switching voltage of 4.5V, the device is also incredibly power-efficient, making it ideal for applications that require low-power consumption. In summary, the IRLI520GPBF is a single-channel MOSFET device with a range of applications due to its low on-state impedance, advanced process, 45 volts breakdown voltage, and 5 amps continuous drain current. It is designed for fast switching and can handle a continuous drain current of up to 5A. Its Gate-Source threshold voltage of 4.5V ensures a low switching voltage and power consumption, making it an ideal device for applications requiring low power consumption.

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