| Allicdata Part #: | IRLI620G-ND |
| Manufacturer Part#: |
IRLI620G |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 200V 4A TO220FP |
| More Detail: | N-Channel 200V 4A (Tc) 30W (Tc) Through Hole TO-22... |
| DataSheet: |  IRLI620G Datasheet/PDF |
| Quantity: | 1000 |
Specifications
| Vgs(th) (Max) @ Id: | 2V @ 250µA |
| Package / Case: | TO-220-3 Full Pack, Isolated Tab |
| Supplier Device Package: | TO-220-3 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 30W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 360pF @ 25V |
| Vgs (Max): | ±10V |
| Gate Charge (Qg) (Max) @ Vgs: | 16nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 800 mOhm @ 2.4A, 5V |
| Drive Voltage (Max Rds On, Min Rds On): | 4V, 5V |
| Current - Continuous Drain (Id) @ 25°C: | 4A (Tc) |
| Drain to Source Voltage (Vdss): | 200V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
Description
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<body><h2>IRLI620G Application Field and Working Principle</h2><p>The IRLI620G is a single-channel logic level field effect transistor (FET) manufactured by Fairchild Semiconductor, belonging to the Discrete Mosfets family. It features ultra-low on-resistance, resulting in extremely low RDS(on) and reduced VGS. This makes it usable in high-side switching applications that involve currents upto 30 VDC, while being protected against permanent damage by avalanche. It is suitable for applications in the automotive industry, portable communication devices, VoIP systems, instrumentation and others.</p><p>The IRLI620G is a standard Si N-channel FET. Its drain is external to the device and connects to an appropriate power source, with the source connected to GND. The gate voltage (Vgs) is also external, and it is set by a signal from the FET’s driving circuit.</p><p>The IRLI620G operates in the enhancement mode. This means that the source-drain resistance is on its lowest when the gate voltage is applied and it increases as the gate voltage is decreased, until it returns to its high-impedance state.</p><p>When the FET is wired in an appropriate circuit, the IRLI620G is triggered by the driving circuit, applying an appropriate gate voltage, which attenuates its drain-source resistance. This allows current to flow from the drain to the source. The device should be triggered in such a way that it results in an increase in the VGS, leading to a decrease in RDS(on).</p><p>The IRLI620G is a low-cost transistor, which features low RDS(on) and a maximum VGS rating of 30V. It is especially useful in applications wherein a high-current capacity is required, such as automotive, telecommunication and other related circuits. The FET is also protected against permanent damage due to avalanche by its built-in protection mechanism.</p></body>The specific data is subject to PDF, and the above content is for reference
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