IRLI530NPBF Allicdata Electronics
Allicdata Part #:

IRLI530NPBF-ND

Manufacturer Part#:

IRLI530NPBF

Price: $ 1.05
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 100V 12A TO220FP
More Detail: N-Channel 100V 12A (Tc) 41W (Tc) Through Hole TO-2...
DataSheet: IRLI530NPBF datasheetIRLI530NPBF Datasheet/PDF
Quantity: 11414
1 +: $ 0.95760
10 +: $ 0.84798
100 +: $ 0.67007
500 +: $ 0.51965
1000 +: $ 0.41025
Stock 11414Can Ship Immediately
$ 1.05
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220AB Full-Pak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 41W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 25V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 100 mOhm @ 9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IRLI530NPBF is a power MOSFET transistor for use in a variety of industrial and automotive applications. It is a high-speed, low- voltage device that can be used in either high side or low side switching. It is also ideal for use in DC-DC conversion, motor control and power supply applications.

The IRLI530NPBF is a N-channel enhancement mode MOSFET, meaning it has a negative gate-to-source voltage requirement, allowing it to operate with a gate threshold voltage of 4 volts. The gate-source threshold voltage (Vgs) is approximately 3V, making it suitable for use in logic level applications, while the maximum drain source voltage (Vds) is 30V, meaning it can continuously handle up to 30 volts without damage. Drive requirements are minimal, as the device can be controlled with a single gate voltage.

This device also has a maximum current rating of 15A, meaning it has plenty of power for switching higher current loads. It also has a low on-state resistance of 6mΩ, meaning it can handle up to 15A with a minimal voltage drop. The device is also logic level compatible, meaning it can be driven directly from a logic signal eliminating the need for additional drivers.

The IRLI530NPBF can be used in a variety of applications, including motor control, DC-DC conversion, power control and switching. It is suitable for both high and low side switching, as well as in-rush current and load switching applications. It can also be used as a switch or current driver in a wide range of applications, making it a versatile option.

The working principle of the IRLI530NPBF is the same as any other MOSFET transistor. When the gate voltage is increased, charge carriers are attracted to the gate and form a channel between the source and drain. This effectively turns the device on, allowing current to flow through the channel to the drain. When the gate voltage is decreased, the channel is no longer formed, and the device is effectively turned off.

The IRLI530NPBF is a versatile and reliable power MOSFET that can be used in a variety of applications. Its low on-state resistance and high current rating make it ideal for power switching and motor control applications. Its low gate-source threshold voltage makes it suitable for use in logic level applications, while its high maximum drain-source voltage make it suitable for a wide range of applications. Its versatility and performance make it an ideal choice for any application.

The specific data is subject to PDF, and the above content is for reference

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