IRLI630G Allicdata Electronics
Allicdata Part #:

IRLI630G-ND

Manufacturer Part#:

IRLI630G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 200V 6.2A TO220FP
More Detail: N-Channel 200V 6.2A (Tc) 35W (Tc) Through Hole TO-...
DataSheet: IRLI630G datasheetIRLI630G Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: TO-220-3 Full Pack, Isolated Tab
Supplier Device Package: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 35W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V
Vgs (Max): ±10V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 400 mOhm @ 3.7A, 5V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The IRLI630G is an N-Channel Enhancement mode MOSFET. This semiconductor is used in a wide range of applications due to its superior electrical performance. Its main uses are in power management, such as DC-DC switching converters and solar chargers, DC motor drives, digital power supplies and more. Its utilization in these technologies gives it a range of desired features.

The IRLI630G is built for high frequency performance. The device has a maximum switching frequency of up to 100KHz, making it ideal for applications that require a fast response. It also provides low on-resistance, making it a great choice for applications which have to have low voltage drop when switching current. The device also has an excellent linearity, making it easy to control.

In terms of its structure, the IRLI630G is an N-Channel Enhancement mode MOSFET that is built from the latest silicon technologies. It is composed of multiple P and N type junctions, self-aligned on a silicon wafer. The N-Channel is constructed out of a lightly doped semiconductor material, which provides a low on-resistance. The junctions are then connected through a source, drain and gate terminal, thus creating a complete circuit that can be triggered and controlled by the gate terminal.

The working principle of the IRLI630G is straightforward. It is triggered by a voltage signal applied to the gate terminal. This voltage signal creates an electrostatic field, which attracts a conducting path between the source and drain terminals. Since the gate voltage controls the strength and width of this conducting path, it can also be used to vary the on-state resistance. When the signal is removed, the gate potential gradually decreases, causing the conducting path to break and the MOSFET to return to its off-state.

The IRLI630G is a powerful device with wide application in power management. Its ability to switch at high frequencies, its low on-resistance and good linearity make it perfect for applications such as DC-DC switching converters, solar chargers, DC motors, digital power supplies and more. With its efficient design and cost-effectiveness, it can bring performance, reliability and power savings to your circuit designs.

The specific data is subject to PDF, and the above content is for reference

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