
Allicdata Part #: | IRLI610ATU-ND |
Manufacturer Part#: |
IRLI610ATU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 200V 3.3A I2PAK |
More Detail: | N-Channel 200V 3.3A (Tc) 3.1W (Ta), 33W (Tc) Throu... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | I2PAK (TO-262) |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.1W (Ta), 33W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 240pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 9nC @ 5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 1.5 Ohm @ 1.65A, 5V |
Drive Voltage (Max Rds On, Min Rds On): | 5V |
Current - Continuous Drain (Id) @ 25°C: | 3.3A (Tc) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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IRLI610ATU is a low-power FET-based discrete device that is used in a variety of applications. The technology behind this FET is based on the MOSFET (metal-oxide-semiconductor field-effect transistor) concepts, which allow the device to carry out its functionality in a more power-efficient manner and with better signal quality. In this article, we will discuss the IRLI610ATU’s application field and working principle.
Application Field
The IRLI610ATU is used in a variety of applications, from consumer electronics to industrial systems. It can be used to drive motor controllers, switch undervoltage/overvoltage detection circuits, and control power supply circuits. Its low power consumption makes it a great choice for applications that require low-power operation, such as consumer electronics. Its robustness and power efficiency also make it a popular choice for many industrial application fields.
The device is also popular for its use in radio receiver circuits and sensor amplifiers. The device can be used to build simple filtering circuits and drive digital amplifiers. It can also be used to drive sampled data systems, such as those used in analog-to-digital converters and analog signal processing.
Working Principle
The IRLI610ATU works on the MOS (metal-oxide-semiconductor) concept, where an insulation layer is used between source and drain regions on the substrate. This insulation layer, known as the gate oxide, acts as a separator between input voltage signals from the source and the output from the drain. The MOS concept allows the device to use a relatively low amount of power for its operation.
The device works by using a voltage-controlled input voltage signal from the source. When the voltage at the source is higher than the voltage at the gate, the device will be in its on-state, allowing current to flow from the source to the drain.
The circuit will remain in its on-state until the voltage at the gate is higher than the voltage at the source. At this point, the device will be switched off, causing no current to flow from the source to the drain.
The IRLI610ATU is a versatile device that can be used in a variety of applications. It is an efficient device that uses a low amount of power for its operation, making it a popular choice for many applications. Its robustness and power efficiency also make it suitable for many industrial application fields.
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