Allicdata Part #: | IRLI510ATU-ND |
Manufacturer Part#: |
IRLI510ATU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 100V 5.6A I2PAK |
More Detail: | N-Channel 100V 5.6A (Tc) 3.8W (Ta), 37W (Tc) Throu... |
DataSheet: | IRLI510ATU Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | I2PAK (TO-262) |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.8W (Ta), 37W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 235pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 8nC @ 5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 440 mOhm @ 2.8A, 5V |
Drive Voltage (Max Rds On, Min Rds On): | 5V |
Current - Continuous Drain (Id) @ 25°C: | 5.6A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The IRLI510ATU series is a power field effect transistor (FET) developed by Infineon Technologies for use in automotive and industrial applications. This high-voltage FET can handle up to 600 V and has the unique ability to source or sink current in a digital fashion, allowing for fast switching arcs. The IRLI510ATU’s power rating and its ultra-low on-resistance make it an ideal choice for applications such as automotive lighting, motor drive, and battery management.
The IRLI510ATU has a maximum operating voltage of 600 volts and a P-Spice drain-source breakdown voltage of 650 volts. It has an ESD machine-model rating of 4 kV, an IGBT on-chip protection rating of 3.2 A, and an on-resistance of 12 mΩ max at 2.5 V. The device offers an avalanche-rated ruggedness of 1.7 kV/μs at 25 °C. The IRLI510ATU has a maximum thermal resistance of 1.4 °C/W, allowing for greater heat dissipation in demanding applications.
The IRLI510ATU utilizes a dedicated structure to provide a real-time, digital-like switching capability. The digital logic circuit controls the source/sink current for FETs in One-of-N (1-of-N) control mode. This controller works with an external control signal, which is available from digital logic systems such as an MCU port or from an amplifier or power supply. Using this control signal, the FET’s operation can be fully adjusted and fine-tuned to the specific application. The external control signal can be used to synchronize multiple FETs, helping to reduce system power dissipation.
The IRLI510ATU has a peak current capability of 12 A and can support pulse width modulation input with up to 1500 kHz. The device has an integrated functional safety system that detects open or short circuit conditions and prevents them from damaging the board and system. It also has fast switching dV/dt protection and Output Clamp Protection, which provide additional protection from EMI and other sources of interference.
The IRLI510ATU is an ideal solution for automotive and industrial applications requiring power switching, motor drive and lighting control. It features a rugged, ultra-low on-resistance structure combined with efficient thermal management and a digital-like switching capability, enabling engineers to easily manage their power designs. The device offers higher switching speeds and a clean signal, making it perfect for applications where low power dissipation, reliability and high efficiency are paramount.
The specific data is subject to PDF, and the above content is for reference
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