IRLI620GPBF Allicdata Electronics
Allicdata Part #:

IRLI620GPBF-ND

Manufacturer Part#:

IRLI620GPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 200V 4A TO220FP
More Detail: N-Channel 200V 4A (Tc) 30W (Tc) Through Hole TO-22...
DataSheet: IRLI620GPBF datasheetIRLI620GPBF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: TO-220-3 Full Pack, Isolated Tab
Supplier Device Package: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 30W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V
Vgs (Max): ±10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 800 mOhm @ 2.4A, 5V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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An IRLI620GPBF is a MOSFET (metal-oxide-semiconductor field-effect transistor) commonly used in switching applications. This transistor is an enhancement mode device, meaning that it is normally in an “off” state and needs to be triggered to turn “on”. It is part of the IRLI635 Group and is available in CAN-3 and TO-252 packages.

The IRLI620GPBF is a single device type FET with an integrated gate-body diode, and can be used in a wide range of applications including automotive, industrial and consumer electronics. It is rated for drain-source voltage (VDS) of up to 500 volts, drain current (ID) of up to 4 amps and has a total gate charge (QG) of 10nC. At a drain-to-source voltage of 25V, it is rated for a maximum on-state resistance (RDSon) of 63mΩ.

The use of an IRLI620GPBF enables electronic switches to be used in place of mechanical switches, or in parallel with mechanical switches, which can provide faster on/off switching with corresponding increased system performance. These devices are primarily used for switching applications in which devices are turned on/off rapidly and/or with very short pulses.

The primary component of the IRLI620GPBF is the metal-oxide semiconductor field-effect transistor (MOSFET) which is a three-terminal semiconductor device that controls current conduction through a gate on its drain-source junction. It works by having a source-drain voltage create an electric field across the gate-drain junction, which then modulates current flowing between the drain and source. When the gate-drain junction is at a negative potential, current flow is blocked and when the junction is at a positive potential, current flow is conducted.

The other component of the IRLI620GPBF is the integrated gate-body diode, which helps control electrical current flow by providing a source-drain path of current when the MOSFET is turned off. The diode allows for the transistor to be switched on and off rapidly, improving overall system performance compared to traditional mechanical switches. The diode also helps protect against current in the event of a short circuit or over current.

The IRLI620GPBF is ideal for use in switching applications such as DC-DC converters, power management and audio applications. These devices offer superior performance, reliability and cost savings benefits when compared to mechanical switches. They are also more efficient and require less power than their mechanical counterparts. These devices are also more reliable than their mechanical counterparts, providing a longer service life and less potential for failure.

In conclusion, the IRLI620GPBF is an ideal device for many switching applications in automotive, industrial and consumer electronics. These devices offer superior performance, reliability and cost savings benefits when compared to mechanical switches. They are also more efficient and require less power than their mechanical counterparts. The integrated gate-body diode helps provide rapid on/off switching, improved system performance, protection from over current and a longer service life.

The specific data is subject to PDF, and the above content is for reference

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