IRLI530G Allicdata Electronics
Allicdata Part #:

IRLI530G-ND

Manufacturer Part#:

IRLI530G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 100V 9.7A TO220FP
More Detail: N-Channel 100V 9.7A (Tc) 42W (Tc) Through Hole TO-...
DataSheet: IRLI530G datasheetIRLI530G Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: TO-220-3 Full Pack, Isolated Tab
Supplier Device Package: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 42W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 25V
Vgs (Max): ±10V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 5V
Series: --
Rds On (Max) @ Id, Vgs: 160 mOhm @ 5.8A, 5V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Current - Continuous Drain (Id) @ 25°C: 9.7A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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IRLI530G is a type of Field Effect Transistor (FET). FETs are a type of semiconductor device integrated with two or more terminals to control the flow of current between them by controlling the voltage or current applied between different terminals. FETs are categorized into various types depending on their functionality, topology and structure. IRLI530G is a single FET device, where one terminal is typically connected to the gate and the other terminals are connected to the channel for controlling the current flow.

A FET operates on the principle of field effect. This refers to the electric field or electric charge at the surface of the semiconductor material creating a potential difference between the terminals. This potential difference can be obtained either by applying an external voltage between the terminals or by charging the surface of the semiconductor. As the applied voltage or the charge level on the surfaces of the semiconductor is varied, the potential difference between the terminals is also affected.

The basic working principle of IRLI530G is very simple. The gate on the FET is used to control the other two terminals by creating a potential difference between them. When the potential difference at the gate increases, it leads to increased current flow through the other terminals. Similarly, when the potential difference at the gate is reduced, the current flow across the terminals is reduced as well.

IRLI530G is widely used in many applications such as switching, power control, amplifier circuits, signal and data processing and for measuring the value of physical parameters. This versatile device is also used for controlling the speed of motors and for motor control, for controlling the temperatures of various stages in a process and for controlling the flow of liquids. As this FET device is a very reliable and consumes lesser power, it is widely used for various consumer electronic applications such as cell phones, car communication systems and remote control systems.

A single FET device like IRLI530G can also be used for other applications. It can be used in voltage control applications as it has a high input impedance and it can also be used in digital logic circuits. This particular type of FET device is used in power circuits as it is capable of controlling large currents and is hence useful in systems that require high current requirements.

The physical size of IRLI530G is very small and it is available in various packages such as SO-8, MSOP-8, DIP-8 and D2PAK. This device can be used in a wide temperature range as it has a maximum operating temperature range of -55°C to 150°C. This makes it suitable for various applications.

Overall, IRLI530G is a single FET device with many applications. Its functionality is based on the principle of field effect and it is used as a switch or amplifier in many applications. Its small size and wide operating temperature range makes it suitable for use in many applications such as remote control systems, cell phones and car communication systems.

The specific data is subject to PDF, and the above content is for reference

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