Allicdata Part #: | IRLI540NPBF-ND |
Manufacturer Part#: |
IRLI540NPBF |
Price: | $ 1.19 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 100V 23A TO220FP |
More Detail: | N-Channel 100V 23A (Tc) 54W (Tc) Through Hole TO-2... |
DataSheet: | IRLI540NPBF Datasheet/PDF |
Quantity: | 2834 |
1 +: | $ 1.08360 |
10 +: | $ 0.96012 |
100 +: | $ 0.75884 |
500 +: | $ 0.58847 |
1000 +: | $ 0.46459 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220AB Full-Pak |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 54W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1800pF @ 25V |
Vgs (Max): | ±16V |
Gate Charge (Qg) (Max) @ Vgs: | 74nC @ 5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 44 mOhm @ 12A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 23A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IRLI540NPBF is a high current, low voltage, lower on-resistance, low gate charge, Logic Level, minimum lead-time N-Channel Power MOSFET from Infineon. This particular device is suitable for use in applications such as switching, driving, and level shift circuits, and can operate at frequencies of up to 1 MHz.
The IRLI540NPBF is a N-type device and requires a positive gate to source voltage to be fully turned on. The device is part of a available in three different packages (DPAK,IPAK, and TO-220), with a maximum drain to source (VDS) rating of 500V and a maximum continuous drain current (ID) rating of 15A. The IRLI540NPBF has a Drain-Source On Resistance (RDSon) of 0.00045Ω, making it ideal for applications that demand high current and low power loss.
The working principle of the IRLI540NPBF is relatively simple. When the gate-source voltage (VGS) is below the threshold voltage (VGS(th)), no current flows between the drain and source terminals. However, once the gate-source voltage is greater than the threshold voltage, a channel is created between the drain and source; allowing current to flow between them. The amount of current that is allowed to flow from the drain to the source (ID) is proportional to VGS (subject to other parameters such as VDS).
The IRLI540NPBF is suitable for a wide range of applications such as switching, driving and level-shift circuits, and for applications where high current is needed and a low On-Resistance (RDSon) is required. It is also ideal for use in synchronous rectifier applications where switching at high frequencies (up to 1 MHz) is desired.
Due to its high current capability and low On-Resistance (RDSon), coupled with its low Gate Charge (QG) and Logic Level threshold voltage, the IRLI540NPBF is ideal for applications that require high current, low power loss and fast switching speeds. This makes it suitable for use in such applications as in Power Supplies, Motor Controllers, LED Drivers, Automotive Electronics, and any application that requires low power loss, high current and fast switching speeds.
In summary, the IRLI540NPBF is a suitable for a wide range of applications such as switching, driving and level-shift circuits, and for applications where high current is needed and a low On-Resistance (RDSon) is required. It has a maximum drain to source (VDS) rating of 500V and a maximum continuous drain current (ID) rating of 15A, and is available in three different packages (DPAK,IPAK, and TO-220). Its low gate charge (QG) and logic level threshold voltage make it well suited for applications that require high current, low power loss and fast switching speeds.
The specific data is subject to PDF, and the above content is for reference
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IRLI2505 | Infineon Tec... | -- | 1000 | MOSFET N-CH 55V 58A TO220... |
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IRLIZ34GPBF | Vishay Silic... | -- | 2441 | MOSFET N-CH 60V 20A TO220... |
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