IRLI640G Allicdata Electronics
Allicdata Part #:

IRLI640G-ND

Manufacturer Part#:

IRLI640G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 200V 9.9A TO220FP
More Detail: N-Channel 200V 9.9A (Tc) 40W (Tc) Through Hole TO-...
DataSheet: IRLI640G datasheetIRLI640G Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: TO-220-3 Full Pack, Isolated Tab
Supplier Device Package: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 40W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V
Vgs (Max): ±10V
Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 180 mOhm @ 5.9A, 5V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Current - Continuous Drain (Id) @ 25°C: 9.9A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The IRFI640G is a part of a class of specialized transistors called field-effect transistors, or FETs. It is an N-channel MOSFET, which means it is made up of a channel of negatively charged particles that open and close depending on the voltage applied to them. These transistors are mainly used in digital logic circuits and in other applications that require high current and voltage switching. They are also often used for power management applications such as motor control, audio amplification, and power supplies.

The IRFI640G is designed for use in a variety of applications, including motor control, audio amplification, and high voltage switches. It is capable of switching up to 60 volts and can handle currents up to 8.5 amps. It is also highly resistant to surge voltages, making it an excellent choice for applications that will be exposed to high voltages. It has a maximum operating temperature of 175°C, making it suitable for harsh environments.

The IRFI640G works through the principle of minority carrier injection. In this process, electrons are accelerated through a metal oxide semiconductor (MOS) structure, travelling in the channels and entering the drain region. When the gate voltage is lowered, the process of negative charge injection begins and the electrons move through the channels to the drain. This creates a positive voltage at the drain terminal and a negative voltage at the source. As the voltage continues to increase, more electrons are injected into the drain producing a larger current.

The IRFI640G is also designed with an internal dielectric layer between the metal oxide semiconductor and the substrate. This layer acts like an insulator and helps to reduce the amount of power leakage from the device. It also helps to minimize the effect of parasitic capacitances on the device’s performance. The IRFI640G is available in several different packaging types and it is designed for DIP, SOIC, and surface-mount technology.

The IRFI640G is an ideal choice for applications that require high current and voltage switching. Its low gate-to-source capacitance and its ability to operate at high temperatures make it a reliable choice for many different types of applications. It is highly versatile, capable of operating in both AC and DC applications, and its large power handling capabilities make it an attractive choice for many different types of application fields.

The specific data is subject to PDF, and the above content is for reference

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