IRLI3705NPBF Allicdata Electronics
Allicdata Part #:

IRLI3705NPBF-ND

Manufacturer Part#:

IRLI3705NPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 55V 52A TO220FP
More Detail: N-Channel 55V 52A (Tc) 58W (Tc) Through Hole TO-22...
DataSheet: IRLI3705NPBF datasheetIRLI3705NPBF Datasheet/PDF
Quantity: 1697
Stock 1697Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220AB Full-Pak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 58W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 98nC @ 5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 10 mOhm @ 28A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IRLI3705NPBF is a high-performance power MOSFET designed for use in a variety of power applications. It is a single, low-voltage, self-protected MOSFET, capable of handling very high input voltages. The IRLI3705NPBF is designed to provide superior performance, high efficiency and outstanding thermal performance, even under the most demanding conditions.

The IRLI3705NPBF is commonly used in a variety of applications such as high-efficiency power supplies and motor controllers, LED lighting, solar cells, power converters, and more. It is also used in automotive applications where high efficiency is necessary for the system to function correctly. This MOSFET is also suitable for switching and audio amplifier applications, where ultra-low distortion is desired.

The IRLI3705NPBF is a single-source power MOSFET with a n-channel, depletion-mode MOSFET (D-MOSFET). It has a maximum drain-source voltage (VDS) of 30V, a maximum drain-source off voltage (VDSS) of 25V and a maximum gate-to-source voltage (VGS) of 7V. The IRLI3705NPBF is capable of carrying up to 7.5A of continuous drain current (IDMAX) with a power dissipation rating (PD) of 24W at a case temperature of 25°C. It has a threshold voltage (VGS(th)) of 4V and an avalanche energy rating (EAS) of 520mJ.

The IRLI3705NPBF features an efficient current-balance process, integrated self-protected blocking, and superior active turn-on characteristics that enable it to deliver very high performance in a wide range of applications. The self-protection feature prevents excessive gate voltage and keeps the device safe even when switching very high voltages or currents. The superior active-turn-on characteristics provide high-power density performance at low operating voltages, making the IRLI3705NPBF an effective choice for most applications.

The working principle of IRLI3705NPBF is quite simple. It works by using an input signal applied to the gate terminal of the MOSFET. The signal causes a voltage drop across the MOSFET, allowing current to flow from the drain to the source. The current flow can be controlled by varying the amount of voltage applied to the gate terminal. This makes the IRLI3705NPBF a very efficient way to control the current flow in a circuit.

The IRLI3705NPBF is a highly versatile MOSFET suitable for a wide range of applications. Its performance and feature-rich design make it an ideal choice for power management and switching applications where efficiency, thermal performance, and cost are critical. With its combination of superior switching speed, low thermal resistance, and high current-handling capability, the IRLI3705NPBF is an excellent choice for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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