IRLI520G Allicdata Electronics
Allicdata Part #:

IRLI520G-ND

Manufacturer Part#:

IRLI520G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 100V 7.2A TO220FP
More Detail: N-Channel 100V 7.2A (Tc) 37W (Tc) Through Hole TO-...
DataSheet: IRLI520G datasheetIRLI520G Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: TO-220-3 Full Pack, Isolated Tab
Supplier Device Package: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 37W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V
Vgs (Max): ±10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
Series: --
Rds On (Max) @ Id, Vgs: 270 mOhm @ 4.3A, 5V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The IRLI520G is a high voltage, constant current, low RDS(on), N-channel MOSFET by Infineon. It is a single-edged, power field effect transistor, commonly used for high-frequency delivery and hostile environments. In addition, the IRLI520G can be used for variable frequency or adjustable power supply control applications, and it may even be used in high-side switch circuits, making it a versatile choice for engineers. The IRLI520G is a fast-acting device, due to its ultra-low on-state resistance (RDS(on)). This limits the power loss in the power stage, providing greater efficiency and improved performance. It is capable of supporting loads up to 25 Amps, and operating at surge voltages of up to 500 Volts.

In terms of performance, the IRLI520G is capable of delivering high-speed switching with a rise time of 10nS, allowing the device to switch quickly with minimal losses. It also has a very low gate charge, with a total gate charge of just 6nC. This allows for more efficient operation, with less power lost as heat. Finally, the IRLI520G offers protection against electro-static discharge through its built-in gate resistors, providing additional durability and reliability.

The working principle of the IRLI520G is based on four distinct characteristics that help define its functionality. The first of these is its ability to act as a voltage-controlled switch, whose threshold voltage determines when it begins to conduct current. When the gate voltage exceeds the threshold, the device will turn on, providing a low-resistance connection between its drain and source terminals. The second characteristic is the MOSFET\'s gate capacitance. This is a measure of the small amount of charge that must be applied to the gate in order to turn on the MOSFET, and it is what makes the device a great choice for high-frequency applications. The third characteristic is its RDS(on), which is a measure of the resistance across the drain-source terminals when the MOSFET is in the conducting state. A lower RDS(on) means a greater efficiency, and this is what makes the IRLI520G an excellent choice for a wide range of applications. The final characteristic is the gate-source threshold voltage, which is the voltage required to turn on the MOSFET. The IRLI520G has a gate source threshold voltage of 10V, meaning that it is capable of switching on in a wide range of applications.

The IRLI520G is an ideal choice for a wide range of applications, ranging from adjustable power supplies and high-side switch circuits to hostile environments and high-frequency delivery. It is capable of quickly and reliably switching on with a rise time of 10nS, while its low RDS(on) reduces power losses in the power stage. In addition, this device is protected against electro-static discharge, making it a reliable and safe choice for engineers. With its wide variety of applications, the IRLI520G is a versatile and reliable choice for those that need a high-performance, high-voltage MOSFET.

The specific data is subject to PDF, and the above content is for reference

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