IRLL014NPBF

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IRLL014NPBF is a high power N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) that is well-suited for a variety of applications in the electronic and power industry. This MOSFET is specifically designed to have low gate charge, high drain source breakdown voltage, and low on-resistance.

It is manufactured by Infineon, the world leader in power MOSFET technology, and it is one of their most popular products in the single transistor range. It features a 30V drain source breakdown voltage (BVDSS) and a maximum continuous drain current (ID) of 12 A. It also has a maximum Pulsed Drain Current (IDM) of 48 A and a maximum gate threshold voltage (VGS) of 12V.

The IRLL014NPBF is typically used for power management applications, such as driving DC motors, switching power supplies, controlling lighting systems, and driving AC loads. It is also well-suited for battery operated systems, automotive applications, and various home appliances. This MOSFET is able to operate at considerably high temperatures (up to 150 Degrees Celsius) and can handle load currents up to 8A.

The IRLL014NPBF\'s working principle is based on the idea of voltage controlled current conduction. This means that the flow of current is controlled by the voltage that is applied between the gate and the source. When there is no voltage applied, the current does not flow, and when the voltage is applied, the current will flow through the MOSFET. This type of MOSFET is an enhancement mode MOSFET, which means that it will conduct current when the voltage between the gate and the source is equal to or greater than its threshold voltage.

The IRLL014NPBF\'s construction consists of N-doped and P-doped epitaxial layers of silicon, which form the source, the drain, and the substrate. There is also a gate oxide layer between the source and the drain, which acts as an insulator. The gate is formed by a conductive material that is applied to the top surface of the MOSFET, and the source and the drain are connected to a power supply.

When the gate is subjected to a voltage, it creates an electrostatic field in the gate oxide layer, which then causes a negatively charged depletion region in the N-doped epitaxial layer of the source and the drain. This will then allow for current to flow through the MOSFET, as the negative charges in the depletion region will act as a barrier for the current flow. By controlling the gate voltage, you can control the current flow through the MOSFET, making it a very efficient and useful device.

In conclusion, the IRLL014NPBF is a high power N-channel MOSFET that has a wide range of applications in the power electronics industry. It is specially designed to have low gate charge, high drain source breakdown voltage, and low on-resistance, and is capable of operating at high temperatures. This device\'s working principle is based on the idea of voltage controlled current conduction, and it is constructed with N-doped and P-doped epitaxial layers of silicon and a gate oxide layer between the source and the drain.

The specific data is subject to PDF, and the above content is for reference