
Allicdata Part #: | IRLL2703PBF-ND |
Manufacturer Part#: |
IRLL2703PBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 30V 3.9A SOT223 |
More Detail: | N-Channel 30V 3.9A (Ta) 1W (Ta) Surface Mount SOT-... |
DataSheet: | ![]() |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.4V @ 250µA |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | SOT-223 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 530pF @ 25V |
Vgs (Max): | ±16V |
Gate Charge (Qg) (Max) @ Vgs: | 14nC @ 5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 45 mOhm @ 3.9A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 3.9A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Discontinued at Digi-Key |
Packaging: | Tube |
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The IRLL2703PBF is a unique type of transistor part that includes both FETs (field effect transistors) and MOSFETs (metal-oxide-semiconductor field-effect transistors). It is a single-gate device that is used in a range of electronic applications. This article will discuss the application field and working principle of an IRLL2703PBF.
The IRLL2703PBF is an ideal choice for applications requiring high-efficiency, high-tech, and low-cost solutions. These FETs and MOSFETs are designed for power management, circuit protection, and other similar applications. The main features of the device include low capacitance, high breakdown voltage, and low gate-to-drain leakage. This transistor has been designed for general purpose applications, as well as for low-noise, high-efficiency switching.
The IRLL2703PBF can operate either as a n-channel or a p-channel device depending on the design requirements. The working principle of the device is quite simple. When the gate voltage is applied, a channel is formed between the drain and the source, allowing current to flow. When there is sufficient voltage applied to the gate, the device will switch between the on and off states, allowing the device to be used as a switch. The device also has a low gate-to-drain leakage, which enables it to be used as a voltage regulator.
The IRLL2703PBF is available in a range of packages and has a wide operating temperature range. It is also highly compatible with various logic families such as TTL, CMOS, and ECL. This makes it a very versatile device that can be used in various applications. The device also has a low on-resistance and is suitable for high-speed switching applications.
The IRLL2703PBF is a reliable and cost-effective solution for a range of applications. It has been designed for both linear and switching applications, as well as for various logic families. This makes it a versatile and highly efficient device, allowing it to be used in a wide variety of applications.
In conclusion, the IRLL2703PBF is a unique type of transistor part that includes both FETs and MOSFETs. It is a single-gate device that is used in a range of electronic applications such as power management, circuit protection, and low-noise and high-efficiency switching. The IRLL2703PBF provides a reliable and cost-effective solution for a range of applications and is available in a range of packages and has a wide operating temperature range. In addition, the device is highly compatible with various logic families, making it a versatile and highly efficient device.
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