IRLL3303TR Allicdata Electronics
Allicdata Part #:

IRLL3303TR-ND

Manufacturer Part#:

IRLL3303TR

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 30V 4.6A SOT223
More Detail: N-Channel 30V 4.6A (Ta) 1W (Ta) Surface Mount SOT-...
DataSheet: IRLL3303TR datasheetIRLL3303TR Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 1V @ 250µA
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 25V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 31 mOhm @ 4.6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The IRLL3303TR is a high performance, low voltage logic N-Channel MOSFET of the International Rectifier family of components. The device is designed specifically for high current, low voltage applications and offers superior ratings and performance over standard MOSFETs. The IRLL3303TR offers excellent switching characteristics with low resistance, high speed and low power consumption. In addition, the device is highly durable and can withstand high voltage and large load currents.

The IRLL3303TR is a single N-Channel Power MOSFET with low ‘on’ resistance (RDS(ON)) and is ideal for high speed and power switching applications like DC-DC converters, power conversion circuits and DC motor drives. It is a through-hole part with a drain current rating of up to 10A and a drain-source voltage rating of up to 100V. The device is rated for operation from -55°C to 125°C and has an insulation breakdown rating of 200V. It has an ESD rating of 2 kV and contains an on-chip gate clamp diode to protect the device against electrostatic discharge.

The IRLL3303TR incorporates a low-resistance N-Channel power MOSFET with an optimized layout, allowing very large currents to be switched on and off with low voltage drops. This combined with a highly durable design and the presence of an on-chip gate clamp diode provides superior performance and reliability when compared to other MOSFETs. The device also offers low switching losses and high switching speed, thus making it suitable for high frequency applications.

The IRLL3303TR has a variety of uses including high current switching applications such as DC-DC converters, power conversion circuits and DC motor drives. The device can also be used for analog switching applications such as audio switching, voltage regulators and temperature control. The high current and low RDS(ON) makes the IRLL3303TR an excellent choice for many applications requiring precision control over load current and low losses.

The IRLL3303TR is an easy-to-use device, with a simple two-wire interface making it suitable for both analog and digital control. The device can be controlled by a variety of signals, such as PWM, voltage control and manual on/off switches. It can also be used in conjunction with other components such as current sensors, resistors and diodes to build complex power control systems. The device also offers superior ESD protection ensuring reliable operation even in harsh environments with high static charge buildup.

In conclusion, the IRLL3303TR is a versatile and reliable N-Channel power MOSFET designed specifically for high current, low voltage applications. It features a low ‘on’ resistance, superior switching characteristics and low power consumption and is suitable for a wide variety of applications including DC-DC converters, power conversion circuits, voltage regulators and DC motor drives. The device is highly durable and offers excellent ESD protection, making it an ideal component for precision switching applications.

The specific data is subject to PDF, and the above content is for reference

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