IRLL110 Allicdata Electronics
Allicdata Part #:

IRLL110-ND

Manufacturer Part#:

IRLL110

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 100V 1.5A SOT223
More Detail: N-Channel 100V 1.5A (Tc) 2W (Ta), 3.1W (Tc) Surfac...
DataSheet: IRLL110 datasheetIRLL110 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V
Vgs (Max): ±10V
Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 5V
Series: --
Rds On (Max) @ Id, Vgs: 540 mOhm @ 900mA, 5V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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IRLL110 is a type of single-field effect transistor, commonly referred to as a MOSFET (Metal-Oxide Semiconductor Field Effect Transistor). It is widely used in a variety of applications, from consumer electronics to industrial applications. The IRLL110 is an enhancement-mode MOSFET, meaning that it only conducts when voltage is applied to the gate of the device and an on-state will be achieved. The gate voltage control also allows operation up to high frequencies, such as VHF/UHF operation.

The IRLL110 is constructed out of three terminals - gate, source, and drain. The source and drain are connected to external components and the gate is connected to an external voltage that controls the channel conductivity. Under an applied gate voltage, there is a channel of mobile electrons (or holes) that forms in the channel of the transistor. This channel has a resistive nature and the amount of current passing between source and drain is partially determined by the magnitude of the gate-to-source voltage (VGs).

The IRLL110 can be used in a variety of switching and amplification applications due to its high input impedance and relatively low output impedance. Its characteristics allow for low gate-to-source voltage to be used and yet still maintain sufficient current gain from the device. When in its on-state, the current that flows from source to drain is approximately proportional to the gate-to-source voltage. This makes the IRLL110 a popular choice for use in switching applications where the current flow can be precisely controlled. The IRLL110 can also be used in amplification applications, where the input is applied to the gate and the output is derived from the drain.

The IRLL110 has high total power dissipation capability, making it well suited for applications such as radio frequency (RF) amplification. It has very high speed, cheap cost and superior switching characteristics which make it a popular choice for many different applications. It also has low power loss and high heat transfer efficiency and it is well suited for applications requiring high-power operation. The drain-to-source breakdown voltage is also quite high, allowing operation at high voltages.

Overall, the IRLL110 is a widely used transistor that provides many advantages over other transistors. It is relatively inexpensive, has good switching characteristics, a high speed of operation, and operates at high voltages. This makes it a great choice for a variety of applications including switching, amplification, and RF amplification. It is an important component in any circuit and should be chosen with care to ensure the best performance for the application.

The specific data is subject to PDF, and the above content is for reference

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