IRLL024ZPBF

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IRLL024ZPBF is a logic level N-channel enhancement-mode silicon-gate power field effect transistor that has been developed for use in electronic switching and amplifying applications. It is mainly employed in power switching applications and is used in various battery-powered applications due to its low power consumption. This device has a low drain-source on-resistance and is also equipped with a high-voltage capability and low gate charge, making it a suitable choice for power management applications where size, weight, and power consumption are critical.

The IRLL024ZPBF is constructed with the following components: an N-channel MOSFET, a drain, a source, and a gate. The principle of operation of the device is that when a voltage is applied to the gate electrode, negative charges accumulate in the insulated conductive channel in-between the source and drain electrodes. This causes an inverse current flow between the source and drain and effectively activates the device as a switch.

This device is specifically designed for switching applications and is mainly used in battery-powered applications or circuits with supply voltage levels up to 12 volts. It is usually employed for applications that require low on-state resistance, low gate charge, and high voltage capability. Common applications of the IRLL024ZPBF include DC-DC converters, remote control circuits, automotive power management, electronic power switching, and other high-power applications.

This device can be used in various voltage levels and is also compatible with many logic families because of its logic level input threshold. It is available in a variety of package configurations, including the TO-251, SOT-223, SOIC-8, and SOT-323 package. Each of these packages has its own advantages, depending on its application. A few of the typical characteristics of this device include drain-source voltage of 20V, drain current of 0.1A, gate input bias current of 1mA, gate-source threshold voltage of 2V, and on-state resistance of about 3.2 Ohm.

In summary, the IRLL024ZPBF is a logic level N-channel enhancement-mode silicon-gate power field effect transistor that is mainly used in power switching applications. This device has a low drain-source on-resistance and is also equipped with a high-voltage capability and low gate charge, making it suitable for applications requiring low power consumption and size reduction. It is available in a variety of package configurations and is compatible with many logic families. Typical characteristics of the device include drain-source voltage of 20V, drain current of 0.1A, gate input bias current of 1mA, gate-source threshold voltage of 2V, and on-state resistance of about 3.2 Ohm.

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