IRLL024NTRPBF Allicdata Electronics
Allicdata Part #:

IRLL024NPBFTR-ND

Manufacturer Part#:

IRLL024NTRPBF

Price: $ 0.25
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 55V 3.1A SOT223
More Detail: N-Channel 55V 3.1A (Ta) 1W (Ta) Surface Mount SOT-...
DataSheet: IRLL024NTRPBF datasheetIRLL024NTRPBF Datasheet/PDF
Quantity: 97500
1 +: $ 0.25000
10 +: $ 0.24250
100 +: $ 0.23750
1000 +: $ 0.23250
10000 +: $ 0.22500
Stock 97500Can Ship Immediately
$ 0.25
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 25V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 15.6nC @ 5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 65 mOhm @ 3.1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The IRLL024NTRPBF is a MOSFET with advanced trench-gate field-stop architecture, which enables it to operate in both enhancement and depletion modes. It combines very low on-resistance, very low threshold voltage, and very low capacitance performance. This makes it suitable for a variety of digital and analog applications, from motor control and telecoms to portable devices and solid-state lighting. In this article, we’ll look at the application field and working principle of the IRLL024NTRPBF.

Application Field

The IRLL024NTRPBF offers low on-resistance, low threshold voltage and low capacitance performance, making it suitable for a variety of applications. These include:

  • motor control
  • telecoms
  • portable devices
  • solid-state lighting
  • digital and analog data transmission.

This MOSFET can be used in a variety of switching and power conversion applications, such as those in motor control, power and Inverter, voltage regulator circuits or with high side and low side power switch design. It can be used to drive LEDs with advanced lighting controls and provide high reliability.

Working Principle

The IRLL024NTRPBF is a p-channel enhancement-mode MOSFET. It is built on a monolithic substrate and has a vertical D-MOSFET structure with a low threshold voltage. This ensures low charge storage and low gate-source capacitance, resulting in fast switching and, consequently, high performance. The advanced trench-gate field-stop architecture allows the device to operate in both enhancement and depletion modes.

The IRLL024NTRPBF is controlled by providing gate voltage signals. In enhancement mode, gate voltage higher than the threshold voltage is applied, and in depletion mode, gate voltage lower than that is used. In the enhancement mode, the device is turned on, and in the depletion mode, it is turned off. The device has a very low on-resistance of 5mOhm, making it extremely efficient.

Conclusion

The IRLL024NTRPBFis a MOSFET with advanced trench-gate field-stop architecture. It combines very low on-resistance and very low capacitance performance, making it suitable for a variety of digital and analog applications. The device is controlled by providing gate voltage signals, and it has a very low on-resistance of 5mOhm, making it highly efficient. As a result, it is an ideal choice for use in motor control, telecoms, portable devices and solid-state lighting applications.

The specific data is subject to PDF, and the above content is for reference

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