Allicdata Part #: | IRLL110PBF-ND |
Manufacturer Part#: |
IRLL110PBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 100V 1.5A SOT223 |
More Detail: | N-Channel 100V 1.5A (Tc) 2W (Ta), 3.1W (Tc) Surfac... |
DataSheet: | IRLL110PBF Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | SOT-223 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2W (Ta), 3.1W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 250pF @ 25V |
Vgs (Max): | ±10V |
Gate Charge (Qg) (Max) @ Vgs: | 6.1nC @ 5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 540 mOhm @ 900mA, 5V |
Drive Voltage (Max Rds On, Min Rds On): | 4V, 5V |
Current - Continuous Drain (Id) @ 25°C: | 1.5A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Discontinued at Digi-Key |
Packaging: | Tube |
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The IRLL110PBF is a type of single-product MOSFET, or Metal-Oxide-Semiconductor Field-Effect Transistor, found in semiconductor devices and most commonly used as a switch. It features a low gate threshold voltage, which makes it a highly efficient choice for switching applications, as it requires less voltage to switch than many other types of FETs. In comparison to bipolar transistors, MOSFETs such as the IRLL110PBF are superior in terms of their power efficiency, size, and cost.
The IRLL110PBF is mainly used in applications such as high frequency, low impedance switching, and audio signal amplification. Due to its low gate threshold voltage, this MOSFET is an efficient choice for powering switching applications that require a low amount of power, as it consumes less than other FETs. In addition, its compact size and ability to be operated in a wide range of temperatures make it a desirable choice for applications in harsh environments, where its ability to stay functional under extreme temperatures is a great asset.
The working principle for IRLL110PBF is based on the standard FET principle, where a reverse biased PN junction isolates the gate from the source, thus creating an electrical field which controls the channel of charge carriers between the source and the drain. In the presence of an external voltage, a channel is created by an electric field between the source and the drain. The voltage applied to the gate determines the size and conductivity of the channel, and thus the current flow between the source and the drain. By changing the amount of charge in the gate, the conductance of the channel between source and drain can be varied accordingly.
This MOSFET is mainly used in applications where low power circuits need to be powered, as the low gate threshold makes it an energy-efficient choice. Furthermore, its low cost and easy availability make it a popular choice for students and hobbyists developing circuits on a tight budget. For example, it is often used as a switch for LED floodlights, LED strips, and LED displays. When used in such applications, it provides a great way for hobbyists to quickly and easily wire up their projects.
In conclusion, the IRLL110PBF is a type of single-product MOSFET, which is mainly used for low power switch applications. Its low gate threshold and wide temperature range make it ideal for use in environments with high temperatures, or where power efficiency is key. In addition, its low cost and easy availability make it a great choice for hobbyists developing low-cost circuits.
The specific data is subject to PDF, and the above content is for reference
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