Allicdata Part #: | IRLL1905TR-ND |
Manufacturer Part#: |
IRLL1905TR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 55V 1.6A SOT223 |
More Detail: | N-Channel 55V 1.6A (Ta) Surface Mount SOT-223 |
DataSheet: | IRLL1905TR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 55V |
Current - Continuous Drain (Id) @ 25°C: | 1.6A (Ta) |
Rds On (Max) @ Id, Vgs: | -- |
Vgs(th) (Max) @ Id: | -- |
FET Feature: | -- |
Power Dissipation (Max): | -- |
Operating Temperature: | -- |
Mounting Type: | Surface Mount |
Supplier Device Package: | SOT-223 |
Package / Case: | TO-261-4, TO-261AA |
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IRLL1905TR transistor is a single-in-line field effect transistor that is designed for use in high speed power switching or as a P-channel enhancement operating mode. The IRLL1905TR is formed on gallium arsenide material, letting it to offer consistent performance in high temperature environments. IRLL1905TR transistors are used in a plethora of applications, such as driving high current loads, high frequency power switching circuits, variable speed motors, signal amplifiers and other, similar, devices.
The IRLL1905TR is a power MOSFET transistor, also referred to as an insulated-gate bipolar transistor (IGBT). The term “IGBT” is a combination of “insulated-gate” and “bipolar”, which reflects the nature of the device. IGBTs consist of two layers: an insulated gate layer formed by an insulated-gate electrode and a palladium-silicon eutectic substrate, and an n-type substrate layer. IGBTs have been designed for high-current, high-speed switching applications, such as switching systems, where power and speed are of primary importance.
The working principle of an IRLL1905TR transistor is quite simple. The source electrode (S) is connected to the power source or battery, while the drain electrode (D) is connected to the load that’s to be powered. The gate electrode (G) is a control terminal that is used to control the level of current flowing through the device’s channels. Applying a voltage to the gate electrode increases the drain-to-source voltage, thus increasing the conduction of current. Similarly, removing the voltage reduces the conduction of current.
The IRLL1905TR transistors can be used in a wide range of applications, such as motor speed control, static converters, and switching circuits. They are ideal for motor speed control because of their wide operating temperature range, low on-state resistance, and fast switching times. One of the primary benefits of using IRLL1905TR transistors compared to other MOSFET transistors is the capability of controlling the phase and magnitude of the current in the load with dynamic frequency control. By varying the frequency of the input signal, the magnitude of the current can be adjusted as desired.
IRLL1905TR transistors are also used for static converters, such as AC-DC (alternating current to direct current) or DC-DC (direct current to direct current) converters. The transistor can be used to provide a controlled, efficient way to transfer energy between two sources. The magnitude and phase of the current can be controlled with dynamic frequency control to ensure maximum efficiency. The transistor also allows for fast switching times, which is ideal for applications that require high speed operation.
IRLL1905TR transistors can also be used in switching circuits, such as in power supply regulators, voltage regulators, and in applications where a high voltage control is necessary. When used in Switched mode power supplies, the transistors provide regulation and control of the power supply voltage with the help of a feedback loop. The regulated voltage provided by the power supply can be further stabilized and regulated by the use of these transistors. Likewise, their fast switching times make them ideal for use in synchronous rectification and power factor correction circuits.
In conclusion, the IRLL1905TR is a single-in-line Field Effect Transistor that is ideal for use in high speed power switching or as a P-channel enhancement operating mode. It is used in a wide range of applications, where its wide operating temperature range, low on-state resistance, and fast switching times make it the ideal choice for motor speed control, static converters, and switching circuits. By varying the frequency of the input signal, the magnitude of the current can be adjusted as desired. The transistor also allows for fast switching times, which is ideal for applications that require high speed operation.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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IRLL3303TR | Infineon Tec... | -- | 1000 | MOSFET N-CH 30V 4.6A SOT2... |
IRLL014 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 60V 2.7A SOT2... |
IRLL014NTR | Infineon Tec... | -- | 1000 | MOSFET N-CH 55V 2A SOT223... |
IRLL014TR | Vishay Silic... | -- | 1000 | MOSFET N-CH 60V 2.7A SOT2... |
IRLL110 | Vishay Silic... | -- | 1000 | MOSFET N-CH 100V 1.5A SOT... |
IRLL110TR | Vishay Silic... | -- | 1000 | MOSFET N-CH 100V 1.5A SOT... |
IRLL3303 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 30V 4.6A SOT2... |
IRLL2703 | Infineon Tec... | -- | 1000 | MOSFET N-CH 30V 3.9A SOT2... |
IRLL014NPBF | Infineon Tec... | -- | 1000 | MOSFET N-CH 55V 2A SOT223... |
IRLL014PBF | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 60V 2.7A SOT2... |
IRLL110PBF | Vishay Silic... | -- | 1000 | MOSFET N-CH 100V 1.5A SOT... |
IRLL2703TR | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 30V 3.9A SOT2... |
IRLL1503 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 30V 75A SOT22... |
IRLL1503TR | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 30V SOT223N-C... |
IRLL1905TR | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 55V 1.6A SOT2... |
IRLL024Z | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 55V 5A SOT223... |
IRLL2703PBF | Infineon Tec... | -- | 1000 | MOSFET N-CH 30V 3.9A SOT2... |
IRLL024ZPBF | Infineon Tec... | -- | 1000 | MOSFET N-CH 55V 5A SOT-22... |
IRLL014NTRPBF | Infineon Tec... | -- | 32500 | MOSFET N-CH 55V 2A SOT223... |
IRLL014TRPBF | Vishay Silic... | -- | 1000 | MOSFET N-CH 60V 2.7A SOT2... |
IRLL024NPBF | Infineon Tec... | -- | 2816 | MOSFET N-CH 55V 3.1A SOT2... |
IRLL2705PBF | Infineon Tec... | -- | 1784 | MOSFET N-CH 55V 3.8A SOT2... |
IRLL3303TRPBF | Infineon Tec... | -- | 5000 | MOSFET N-CH 30V 4.6A SOT2... |
IRLL3303PBF | Infineon Tec... | -- | 493 | MOSFET N-CH 30V 4.6A SOT2... |
IRLL024ZTRPBF | Infineon Tec... | -- | 10000 | MOSFET N-CH 55V 5A SOT223... |
IRLL110TRPBF | Vishay Silic... | -- | 12500 | MOSFET N-CH 100V 1.5A SOT... |
IRLL024NTRPBF | Infineon Tec... | -- | 97500 | MOSFET N-CH 55V 3.1A SOT2... |
IRLL2705TRPBF | Infineon Tec... | -- | 43187 | MOSFET N-CH 55V 3.8A SOT2... |
IRLL2703TRPBF | Infineon Tec... | -- | 2500 | MOSFET N-CH 30V 3.9A SOT2... |
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