IRLL110TRPBF Allicdata Electronics
Allicdata Part #:

IRLL110PBFTR-ND

Manufacturer Part#:

IRLL110TRPBF

Price: $ 0.24
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 100V 1.5A SOT223
More Detail: N-Channel 100V 1.5A (Tc) 2W (Ta), 3.1W (Tc) Surfac...
DataSheet: IRLL110TRPBF datasheetIRLL110TRPBF Datasheet/PDF
Quantity: 12500
1 +: $ 0.24000
10 +: $ 0.23280
100 +: $ 0.22800
1000 +: $ 0.22320
10000 +: $ 0.21600
Stock 12500Can Ship Immediately
$ 0.24
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V
Vgs (Max): ±10V
Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 5V
Series: --
Rds On (Max) @ Id, Vgs: 540 mOhm @ 900mA, 5V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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IRLL110TRPBF is a type of Field Effect Transistor (FET) in a single package. It is usually used as an amplifier and switch in various applications. It is also used in logic circuits and is often used in the switching of high-current applications.

A FET is a transistor that works using an electric field. It has a source, a drain, and a gate. The source is where the input signal is applied, the drain is where the output signal is taken, and the gate is an insulated region between the source and the drain. When a voltage is applied to the gate, the electric field created by the gate will affect the flow of currents between the source and the drain. The greater the voltage on the gate, the more current will flow.

IRLL110TRPBF has a high-voltage drain-to-source breakdown voltage rating of 110V. This makes it suitable for high-power applications. It also has a low drain-to-source on-state resistance of 0.2ohm, which makes it ideal for switching loads with minimal energy loss.

IRLL110TRPBF is also designed to have a high peak current rating of 13A. This allows it to be used in applications which require high current such as motor control. The gate threshold voltage of 4.5V is also designed to be low, making it suitable for low voltage applications.

The working principle of IRLL110TRPBF is quite simple. When the gate voltage is increased, the electric field created by the gate will draw more current from the source to the drain. This current will be used to power the load that is connected to the FET. The load can then be switched on and off by adjusting the gate voltage.

IRLL110TRPBF can be used in a variety of applications. It can be used as a power switch in motor control and in power converters. It can also be used as an amplifier and a switch in audio systems and other low voltage applications. It has also been used in micro-controllers, TV sets, and other consumer electronics.

In summary, IRLL110TRPBF is a single package FET that is suitable for high voltage and high current applications. It has a low threshold voltage, a high breakdown voltage, and low on-state resistance that make it suitable for a variety of applications. It can be used as a power switch, an amplifier, and a switch in audio systems and consumer electronics.

The specific data is subject to PDF, and the above content is for reference

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