IRLL024Z

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

IRLL024Z is a single field-effect transistor (FET) that utilizes a self-aligned planar double-diffused metal–oxide–semiconductor (DMOS) technology. This type of device is used in high-voltage and high-current applications, such as motor control, power conversion, and power-supply control. It has several advantages over other types of transistors such as BJTs such as lower gate capacitance, lower voltage drop, higher switching speed, improved on-state resistance linearity, and less switching losses.

The IRLL024Z device is a N-channel MOSFET (metal-oxide-semiconductor field-effect transistor). The device is composed of three terminals--the gate, drain, and source. The gate terminal is used to control the device and the drain and source terminals are connected to the load. Operationally, when a voltage is applied to the gate, it induces a current channel between the drain and source terminal, allowing the device to be used as a switch.

The IRLL024Z device utilizes a self-aligned planar double-diffused DMOS structure. This technology is advantageous in that it offers higher efficiency and reduced gate capacitance as compared to other planar MOSFET technologies. The device also features reduced gate-to-drain charges, as well as reduced gate-to-source and drain-to-source capacitances. This allows for higher current density, improved switching speed, and improved on-state resistance linearity compared to other types of transistors.

The IRLL024Z device is further enhanced by its ESD (electrostatic Discharge) rating, which is far superior to other MOSFETs. This device is capable of handling up to 1.5kV of ESD: far above the industry safety ratings. This makes the device suitable for a wide range of applications.

The IRLL024Z device is designed for high-voltage and high-current applications, such as motor control, power conversion, and power-supply control. The device features a maximum drain-source voltage rating of 30V and a maximum continuous drain current rating of 4A. The device also features a maximum power dissipation rating of 1.2W. These features make the device ideal for motor control, switching power supplies, and other high-voltage, high-current applications.

In summary, the IRLL024Z is a high-performance, high-voltage, high-current single field-effect transistor (FET). The device is composed of a self-aligned planar double-diffused metal–oxide–semiconductor (DMOS) technology, allowing for improved efficiency and reduced capacitances compared to other types of transistors. The device also features enhanced ESD ratings making it suitable for a wide range of applications. These features make the device ideal for motor control, power conversion, and power-supply control applications.

The specific data is subject to PDF, and the above content is for reference