Allicdata Part #: | IRLL2705CT-ND |
Manufacturer Part#: |
IRLL2705TR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 55V 3.8A SOT223 |
More Detail: | N-Channel 55V 3.8A (Ta) 1W (Ta) Surface Mount SOT-... |
DataSheet: | IRLL2705TR Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | SOT-223 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 870pF @ 25V |
Vgs (Max): | ±16V |
Gate Charge (Qg) (Max) @ Vgs: | 48nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 40 mOhm @ 3.8A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 3.8A (Ta) |
Drain to Source Voltage (Vdss): | 55V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Cut Tape (CT) |
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IrL2705TR is a tandem (dual) N-Channel MOSFET manufactured by Infineon Technologies. This versatile device provides improved on-state characteristics and minimized gate charge. It is suitable for a variety of applications such as switching, voltage level selection, ESD protection, and battery circuit protection. As a power MOSFET, IrL2705TR has a very low on-state resistance and a high avalanche energy rating that allows reliable operation even in harsh conditions.
The IrL2705TR application field is mainly switch mode power supplies, pulse applications, logic circuits, and driving circuits, due to its low gate charge and fast switching times. It is also commonly used in automotive, lighting and home appliance applications, including air conditioners, refrigerators and cookers. Furthermore, this device is suitable for use in battery protection circuits, thanks to its low leakage current, low reverse drain drain current, and lack of switching noise when used with step-down dc-to-dc converters.
Working principle of IrL2705TR is based on the MOSFET transistor structure, which relies on the electric field generated by the gate voltage. This field attracts mobile electrons from the n-channel region to the p-channel regions, creating an inversion layer. The inversion layer is a field-effect that acts as an insulator, preventing electric conduction between drain and source. Applying a positive gate voltage will increase the thickness of the inversion layer, thereby increasing resistance and turning off the MOSFET transistor. Reversing the gate voltage will cause the MOSFET to turn on, as the inversion layer has shrunk.
In addition to its switching ability, IrL2705TR also provides protection against electrostatic discharge (ESD), by conducting electric charge away from sensitive components to prevent electric current transients. This ESD protection is offered by the device’s low on-state resistance, which is usually less than 10mΩ. Finally, IrL2705TR’s low drain-source forward voltage drop further reduces power consumption, allowing for more efficient operation.
The combination of IrL2705TR\'s low on-state resistance, small gate charge and low leakage current make it ideal for low-power applications. Its high avalanche energy rating and ESD protection capabilities make it suitable for high-power applications. Additionally, IRLL2705TR cost-effectively delivers maximum performance and reliability in a variety of applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
IRLL2705TR | Infineon Tec... | -- | 1000 | MOSFET N-CH 55V 3.8A SOT2... |
IRLL3303TR | Infineon Tec... | -- | 1000 | MOSFET N-CH 30V 4.6A SOT2... |
IRLL014 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 60V 2.7A SOT2... |
IRLL014NTR | Infineon Tec... | -- | 1000 | MOSFET N-CH 55V 2A SOT223... |
IRLL014TR | Vishay Silic... | -- | 1000 | MOSFET N-CH 60V 2.7A SOT2... |
IRLL110 | Vishay Silic... | -- | 1000 | MOSFET N-CH 100V 1.5A SOT... |
IRLL110TR | Vishay Silic... | -- | 1000 | MOSFET N-CH 100V 1.5A SOT... |
IRLL3303 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 30V 4.6A SOT2... |
IRLL2703 | Infineon Tec... | -- | 1000 | MOSFET N-CH 30V 3.9A SOT2... |
IRLL014NPBF | Infineon Tec... | -- | 1000 | MOSFET N-CH 55V 2A SOT223... |
IRLL014PBF | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 60V 2.7A SOT2... |
IRLL110PBF | Vishay Silic... | -- | 1000 | MOSFET N-CH 100V 1.5A SOT... |
IRLL2703TR | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 30V 3.9A SOT2... |
IRLL1503 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 30V 75A SOT22... |
IRLL1503TR | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 30V SOT223N-C... |
IRLL1905TR | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 55V 1.6A SOT2... |
IRLL024Z | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 55V 5A SOT223... |
IRLL2703PBF | Infineon Tec... | -- | 1000 | MOSFET N-CH 30V 3.9A SOT2... |
IRLL024ZPBF | Infineon Tec... | -- | 1000 | MOSFET N-CH 55V 5A SOT-22... |
IRLL014NTRPBF | Infineon Tec... | -- | 32500 | MOSFET N-CH 55V 2A SOT223... |
IRLL014TRPBF | Vishay Silic... | -- | 1000 | MOSFET N-CH 60V 2.7A SOT2... |
IRLL024NPBF | Infineon Tec... | -- | 2816 | MOSFET N-CH 55V 3.1A SOT2... |
IRLL2705PBF | Infineon Tec... | -- | 1784 | MOSFET N-CH 55V 3.8A SOT2... |
IRLL3303TRPBF | Infineon Tec... | -- | 5000 | MOSFET N-CH 30V 4.6A SOT2... |
IRLL3303PBF | Infineon Tec... | -- | 493 | MOSFET N-CH 30V 4.6A SOT2... |
IRLL024ZTRPBF | Infineon Tec... | -- | 10000 | MOSFET N-CH 55V 5A SOT223... |
IRLL110TRPBF | Vishay Silic... | -- | 12500 | MOSFET N-CH 100V 1.5A SOT... |
IRLL024NTRPBF | Infineon Tec... | -- | 97500 | MOSFET N-CH 55V 3.1A SOT2... |
IRLL2705TRPBF | Infineon Tec... | -- | 43187 | MOSFET N-CH 55V 3.8A SOT2... |
IRLL2703TRPBF | Infineon Tec... | -- | 2500 | MOSFET N-CH 30V 3.9A SOT2... |
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