IRLL2705TR Allicdata Electronics
Allicdata Part #:

IRLL2705CT-ND

Manufacturer Part#:

IRLL2705TR

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 55V 3.8A SOT223
More Detail: N-Channel 55V 3.8A (Ta) 1W (Ta) Surface Mount SOT-...
DataSheet: IRLL2705TR datasheetIRLL2705TR Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 25V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 40 mOhm @ 3.8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Cut Tape (CT) 
Description

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IrL2705TR is a tandem (dual) N-Channel MOSFET manufactured by Infineon Technologies. This versatile device provides improved on-state characteristics and minimized gate charge. It is suitable for a variety of applications such as switching, voltage level selection, ESD protection, and battery circuit protection. As a power MOSFET, IrL2705TR has a very low on-state resistance and a high avalanche energy rating that allows reliable operation even in harsh conditions.

The IrL2705TR application field is mainly switch mode power supplies, pulse applications, logic circuits, and driving circuits, due to its low gate charge and fast switching times. It is also commonly used in automotive, lighting and home appliance applications, including air conditioners, refrigerators and cookers. Furthermore, this device is suitable for use in battery protection circuits, thanks to its low leakage current, low reverse drain drain current, and lack of switching noise when used with step-down dc-to-dc converters.

Working principle of IrL2705TR is based on the MOSFET transistor structure, which relies on the electric field generated by the gate voltage. This field attracts mobile electrons from the n-channel region to the p-channel regions, creating an inversion layer. The inversion layer is a field-effect that acts as an insulator, preventing electric conduction between drain and source. Applying a positive gate voltage will increase the thickness of the inversion layer, thereby increasing resistance and turning off the MOSFET transistor. Reversing the gate voltage will cause the MOSFET to turn on, as the inversion layer has shrunk.

In addition to its switching ability, IrL2705TR also provides protection against electrostatic discharge (ESD), by conducting electric charge away from sensitive components to prevent electric current transients. This ESD protection is offered by the device’s low on-state resistance, which is usually less than 10mΩ. Finally, IrL2705TR’s low drain-source forward voltage drop further reduces power consumption, allowing for more efficient operation.

The combination of IrL2705TR\'s low on-state resistance, small gate charge and low leakage current make it ideal for low-power applications. Its high avalanche energy rating and ESD protection capabilities make it suitable for high-power applications. Additionally, IRLL2705TR cost-effectively delivers maximum performance and reliability in a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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