IRLL014TRPBF

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IRLL014TRPF is a N-channel enhancement mode MOSFET designed to extend the range of current sources and sinks available within high-density circuit designs. This device is housed in the DFN2020-6 package, a leadless package with a thermal pad that offers exceptional electrical and thermal performance, particularly in high current applications. The MOSFET also features a low on-state resistance (RDS(on)) of 1.4 Ω, making it an ideal choice for achieving high efficiency and low power dissipation within an application.

The IRLL014TRPF is suited for a variety of applications including low-side switch, DC-DC conversion and high-side switch. This MOSFET is also ideal for step-up converters, PWM controllers, synchronous buck controllers and boost controllers. When designing with the IRLL014TRPF, it is important to ensure that operating junction temperature does not exceed the maximum temperature of +175°C.

In terms of power management, the IRLL014TRPF MOSFET\'s drain current, as defined by the current source and sinks of the circuit, is controlled by the gate voltage, which is discharged with an internal gate resistor. When gate voltage is low, the MOSFET is turned on while when gate voltage is high, the MOSFET is turned off. Due to this MOSFET\'s fixed on-resistance, switching frequency of the circuitry can be relatively higher compared to other MOSFETs.

TheIRLL014TRPF features a multitude of features that make it suitable for a range of applications. Firstly, its low RDS(on) maximizes efficiency, dissipates less power, and helps reduce the power losses of the circuit. Secondly, its higher temperature ratio, compared to other MOSFETS, ensures a stable temperature within an application. Lastly, design engineers can tweak the gate voltage of the MOSFET in order to fine-tune the performance needed for an application.

The IRLL014TRPF is designed to maximize process margin and thermal stability. This is accomplished by integrating an advanced trench technology in order to achieve an optimized RDS(on) level. The trench technology also ensures high-temperature operation, providing an optimal balance between process margin and thermal stability. Furthermore, the device offers smaller footprint and higher power density, meaning it supports high current levels with minimal power dissipation.

In summary, the IRLL014TRPF is an ideal choice for high-density MCUs, analog and digital circuits, and power management applications. This MOSFET offers high-current sinks and sources with minimal power dissipation, optimizing the performance of a system. Additionally, this device\'s trench technology and smaller footprint provides optimal power density and thermal stability. Thus, the IRLL014TRPF is a reliable and sturdy device for applications requiring a high degree of efficiency and power management.

The specific data is subject to PDF, and the above content is for reference