IRLL2705PBF Allicdata Electronics
Allicdata Part #:

IRLL2705PBF-ND

Manufacturer Part#:

IRLL2705PBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 55V 3.8A SOT223
More Detail: N-Channel 55V 3.8A (Ta) 1W (Ta) Surface Mount SOT-...
DataSheet: IRLL2705PBF datasheetIRLL2705PBF Datasheet/PDF
Quantity: 1784
Stock 1784Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 25V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 40 mOhm @ 3.8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Discontinued at Digi-Key
Packaging: Tube 
Description

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IRLL2705PBF application field and working principle

IRLL2705PBF application field and working principle

The IRLL2705PBF is a N-Channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) which is used as a switch in applications including opto-electronics, automotive, medical and space applications. The IRLL2705PBF is a low-voltage, low-threshold logic level MOSFET that can be used in applications where very low power is required, such as when the voltage supplied is only 3 volts.

Features

  • Operating voltage=Vds(max): 20V
  • Drain-Source On-resistance: 55mOhms(typ)
  • FET Polarity: N-channel
  • Gate-Source Voltage drift: 30V
  • Low gate-drive voltage

Working Principle of MOSFET

The MOSFET (metal oxide semiconductor field-effect transistor) is a voltage-controlled transistor used in electronic circuits. In the MOSFET, the gate forms an electric field that controls the flow of electrons across a channel. The gate is used to turn the transistor on and off, allowing it to control other circuits.

When a gate voltage is applied, an electric field is created that attracts electrons. This causes the electrons to move from the source to the drain, creating an electric current. The amount of current flowing through the channel is dependent on the gate voltage. If the gate voltage is increased, more current can flow through the transistor.

The MOSFET also acts as a voltage regulator, as it can be used to limit the voltage in a circuit. When the gate voltage is increased, the voltage across the drain-source is also increased. The MOSFET acts as a resistor and limits the amount of current that can flow through it.

Applications of IRLL2705PBF

The IRLL2705PBF is used in applications where low power is required, such as:

  • Interrupt logic
  • Radio-frequency switching
  • Microprocessor control
  • Power supply rail switching
  • Data transmission switching
  • Video signal switching

The IRLL2705PBF has been designed for use in high frequency switching, making it ideal for use in applications such as radio frequency switching, microprocessor control and data transmission switching.

The IRLL2705PBF is also suitable for use in medical applications, as it offers low capacitance and is capable of operating at high temperatures. The IRLL2705PBF is also capable of providing a reliable switching operation in automotive and space applications, due to its extremely low power consumption.

The specific data is subject to PDF, and the above content is for reference

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