Allicdata Part #: | IRLL014TR-ND |
Manufacturer Part#: |
IRLL014TR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 60V 2.7A SOT223 |
More Detail: | N-Channel 60V 2.7A (Tc) 2W (Ta), 3.1W (Tc) Surface... |
DataSheet: | IRLL014TR Datasheet/PDF |
Quantity: | 1000 |
Specifications
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | SOT-223 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2W (Ta), 3.1W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 400pF @ 25V |
Vgs (Max): | ±10V |
Gate Charge (Qg) (Max) @ Vgs: | 8.4nC @ 5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 200 mOhm @ 1.6A, 5V |
Drive Voltage (Max Rds On, Min Rds On): | 4V, 5V |
Current - Continuous Drain (Id) @ 25°C: | 2.7A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
Description
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IRLL014TR is a depletion mode MOSFET designed and manufactured by Vishay, a renowned semiconductor company. It is a single-channel type of transistor and operates as a switching device. This power MOSFET has a low on-state resistance and is built on a simple two-terminal structure. It is widely used in high-temperature power and distributed power devices, as well as in high-current automotive applications.The IRLL014TR has a small gate-to-source capacitance, resulting in faster switching speeds. This allows it to be used in applications requiring high switching frequencies, and also helps maintain low power consumption. The device has a maximum gate voltage of 20 volts and can be operated over a wide temperature range of -55ºC to 175ºC.The working principle of IRLL014TR is similar to other MOSFETs, but with a few distinct features. It uses a depletion-type MOSFET structure, which means there is no need for a separate gate bias voltage. As the gate-to-source voltage is applied, carriers move from the source to the gate thus creating a conductive channel from source-to-drain. This change in voltage creates a proportional change in drain current due to the high input impedance of the transistor.IRLL014TR is primarily used for energy saving and efficient energy management applications. It can be used as a power switch for electrical appliances, consumer electronics and motor controls. It is also used in high-frequency switching applications as it has a low on-state resistance and can be switched at a high frequency. It is also used in power distribution systems and high-temperature power applications.In short, the IRLL014TR has numerous applications. It is an excellent power switch in a number of consumer and industrial applications, as it has a low on-state resistance and can be operated over a wide temperature range. In addition, it can be used in high-frequency switching applications, as it has a small gate-to-source capacitance. Finally, its depletion-type MOSFET structure means it doesn’t need a separate gate bias voltage, making it an ideal choice for efficient energy management applications.The specific data is subject to PDF, and the above content is for reference
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