Allicdata Part #: | IRLR3410TRLPBFTR-ND |
Manufacturer Part#: |
IRLR3410TRLPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 100V 17A DPAK |
More Detail: | N-Channel 100V 17A (Tc) 79W (Tc) Surface Mount D-P... |
DataSheet: | IRLR3410TRLPBF Datasheet/PDF |
Quantity: | 1000 |
Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
Rds On (Max) @ Id, Vgs: | 105 mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 34nC @ 5V |
Vgs (Max): | ±16V |
Input Capacitance (Ciss) (Max) @ Vds: | 800pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 79W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D-Pak |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Series: | HEXFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 17A (Tc) |
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IRLR3410TRLPBF is a N-Channel, 30V, 9.5A, low side, and Fast Ir, Rds(on), Logic Level, and shielded gate MOSFET manufactured by International Rectifier Corporation. It is a thermally enhanced, shielded, low-voltage, power FET (Field Effect Transistor) suitable for many applications including those in both AC and DC power control, high-current switching, and load sensing. This power FET is capable of passing strong inrush currents and provides a low RDS(on) for reduction in conduction losses. It also has excellent immunity from transients when used with proper gate drive.
The IRLR3410TRLPBF is manufactured using a trench MOSFET technology which results in a compact, shielded package. It is also part of the company\'s high-density, advanced Power MOSFET family that promotes reducing the space requirements of an application. Its advanced trench process also provides low on-resistance and excellent characteristics that make it ideal for automotive, commercial and industrial applications.
The application field of the IRLR 3410TRLPBF involves power supply design and management, controller feedback, motor control, and switching devices, amongst others. It is a versatile device and offers a low RDS(on) for for reducing conduction losses. Its low-voltage driving capability also makes it suitable for a wide range of applications.
The working principle of the IRLR 3410TRLBF relies on the fact that it is a power FET (Field Effect Transistor) with a low-voltage drive capability. It combines a shielded gate, low-voltage MOSFET, which results in low conduction losses, making it efficient for switching applications. It employs a trench MOSFET technology which results in device compactness, in addition to reduced gate resistance and minimal gate charge.
The IRLR 3410TRLPBF is a low on-resistance, low-voltage/Logic-level gate MOSFET which ensures very low conduction losses in both AC and DC applications. It utilizes a large area source with a high current capacity and low-impedance device construction. The device is optimized for low on-resistance and is compatible with a range of gate drivers. The power FET also has an improved immunity to transients when used with proper gate drive.
The IRLR 3410TRLPBF is a compact, fast switching, shielded N-Channel MOSFET that is an ideal choice for applications such as power management and control, motor control and high-current switching. Its benefits include low on-resistance as well as thermal and transient performance, making it suitable for many industrial and automotive applications. It also provides a low-voltage drive capability, allowing for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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