Allicdata Part #: | IRLR014NTRPBF-ND |
Manufacturer Part#: |
IRLR014NTRPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 55V 10A DPAK |
More Detail: | N-Channel 55V 10A (Tc) 28W (Tc) Surface Mount D-Pa... |
DataSheet: | IRLR014NTRPBF Datasheet/PDF |
Quantity: | 1000 |
Series: | HEXFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 55V |
Current - Continuous Drain (Id) @ 25°C: | 10A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 140 mOhm @ 6A, 10V |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 7.9nC @ 5V |
Vgs (Max): | ±16V |
Input Capacitance (Ciss) (Max) @ Vds: | 265pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 28W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D-Pak |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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The output of a transistor is linked with the input, an action known as gain. IRLR014NTRPBF, a power MOSFET transistor, has very high voltage and current gains. This article aims to explain its application fields and working principle.
Application Fields of IRLR014NTRPBF Transistor
IRLR014NTRPBF transistor is particularly suitable for use in a wide range of switch-mode DC/DC converter applications. Examples of applications include motor control circuits, power supplies, inverters, and other similar electronic devices. The personal computers, laptops, tablets, smartphones, and other electronic appliances are equipped with multiple IRLR014NTRPBF transistors for efficient operation.
In comparison to the other types of transistors such as BJT, IRLR014NTRPBF requires much less power for operation, making it ideal for low-current applications. When used in power amplifiers, IRLR014NTRPBF transistor provides superior performance and reliability along with high current gain and low bias current. Due to its high voltage and current gains, it is also used in radio frequency (RF) applications.
Working Principle of IRLR014NTRPBF
This MOSFET transistor has a three-terminal configuration like all other transistors. It consists of a source, a drain, and a gate terminal. The drain and the source of IRLR014NTRPBF are two heavily doped p-type regions formed in the n-type substrate. These two regions act as an electrical connection inside the transistor.
The source terminal is connected to the p-type region. The gate terminal is located above the channel, between the source and the drain. A voltage applied to the gate terminal controls the flow of current through the transistor. When the voltage is applied, it produces an electric field which controls the conductivity of the channel between the source and the drain terminals. This facilitates the movement of electrons from the source to the drain. As a result, the output current becomes proportional to the input voltage.
Conclusion
IRLR014NTRPBF is a power MOSFET transistor known for its high voltage and current gains. It is ideal for applications like switch-mode DC/DC converters, motor control circuits, power supplies, inverters, and other low-current applications. It has a three-terminal configuration i.e. the source, drain, and gate terminal. The voltage applied to the gate terminal controls the flow of current through the transistor and its output is proportional to the input voltage.
The specific data is subject to PDF, and the above content is for reference
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