| Allicdata Part #: | IRLR014TR-ND |
| Manufacturer Part#: |
IRLR014TR |
| Price: | $ 1.08 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 60V 7.7A DPAK |
| More Detail: | N-Channel 60V 7.7A (Tc) 2.5W (Ta), 25W (Tc) Surfac... |
| DataSheet: | IRLR014TR Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 1.08000 |
| 10 +: | $ 1.04760 |
| 100 +: | $ 1.02600 |
| 1000 +: | $ 1.00440 |
| 10000 +: | $ 0.97200 |
| Vgs(th) (Max) @ Id: | 2V @ 250µA |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package: | D-Pak |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 2.5W (Ta), 25W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 400pF @ 25V |
| Vgs (Max): | ±10V |
| Gate Charge (Qg) (Max) @ Vgs: | 8.4nC @ 5V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 200 mOhm @ 4.6A, 5V |
| Drive Voltage (Max Rds On, Min Rds On): | 4V, 5V |
| Current - Continuous Drain (Id) @ 25°C: | 7.7A (Tc) |
| Drain to Source Voltage (Vdss): | 60V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The IRLR014TR is a type of single transistor FET, belonging to the “Metal-Oxide-Semiconductor field-effect transistor” family of transistors (MOSFETs). A MOSFET is a type of field-effect transistor that is able to control large currents with a low input current, making it suitable for a wide range of low current applications. The IRLR014TR is particularly suitable for high speed switching applications, as it has a low On-state resistance and a very fast switching speed.
The IRLR014TR is an N-channel Enhancement Mode device, which means that the transistor can operate in either enhancement or depletion modes. In enhancement mode the gate acts as an electrode, and the voltage on the gate opens up the channel, allowing current to flow from the drain to the source. In depletion mode, the channel is “depleted” of charge, and the transistor is turned off.
The IRLR014TR is a high-current transistor, meaning that it is designed to handle large amounts of current. It is also designed to dissipate a large amount of heat, making it suitable for high-stress applications. The design of the IRLR014TR also ensures that it can handle large transient currents without damage, which is an advantage over other types of transistors.
The IRLR014TR has a wide range of applications, including motor control, DC to DC conversion, power switching, and power supply circuits. The transistor can also be used in audio amplifiers, as it is able to handle large amounts of current with low loss. The IRLR014TR is also suitable for high frequency applications, as its fast switching speed makes it ideal for managing high-frequency signals.
The working principle of the IRLR014TR is similar to other MOSFETs. A voltage is applied to the gate of the transistor, which creates an electric field, resulting in a channel opening in the silicon. This channel allows electrons to flow between the drain and the source, and the amount of current that passes through depends on the voltage applied to the gate.
The IRLR014TR is a versatile and reliable transistor, suitable for a wide range of applications. Its low on-state resistance and fast switching speed make it an ideal choice for high frequency and power applications, while its rugged design makes it capable of handling high transient currents. With its wide range of applications, the IRLR014TR is a great choice for any design needing power switching or high current applications.
The specific data is subject to PDF, and the above content is for reference
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IRLR014TR Datasheet/PDF