IRLR024TRPBF Allicdata Electronics
Allicdata Part #:

IRLR024TRPBFTR-ND

Manufacturer Part#:

IRLR024TRPBF

Price: $ 0.33
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 60V 14A DPAK
More Detail: N-Channel 60V 14A (Tc) 2.5W (Ta), 42W (Tc) Surface...
DataSheet: IRLR024TRPBF datasheetIRLR024TRPBF Datasheet/PDF
Quantity: 2000
1 +: $ 0.33000
10 +: $ 0.32010
100 +: $ 0.31350
1000 +: $ 0.30690
10000 +: $ 0.29700
Stock 2000Can Ship Immediately
$ 0.33
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 25V
Vgs (Max): ±10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 5V
Series: --
Rds On (Max) @ Id, Vgs: 100 mOhm @ 8.4A, 5V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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IRLR024TRPBF is a type of MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) that belongs to the single transistor category of FETs. It is a three-terminal device that is used to amplify, switch and regulate the electrical signals. This type of MOSFET is available in many factories, which is an added plus for anyone looking to purchase it. As its name suggests, it is a single package device.

In terms of applications, IRLR024TRPBF has a wide range ranging from automotive audio applications to cellular phone power amplifiers. It is also very popular in motor control applications. Apart from that, it can be used in a variety of other applications such as analog and digital circuit switching, lighting control and power supply circuits.

To understand the working principle behind this MOSFET, it is important to understand how a MOSFET works in general. Basically, it uses a gate that is placed between the source and drain of the transistor. When a positive voltage is applied to the gate, it creates current flow between the source and drain, which is known as the on-state. When the gate voltage is decreased, current flow is cut off and the transistor is in its off-state. In the case of the IRLR024TRPBF, the drain-source forward current is 24 A and it is usually used in applications that require high output currents.

When it comes to the structure of IRLR024TRPBF, it has a basic three-terminal structure. It consists of a gate terminal, a drain terminal and a source terminal. The gate terminal is used to control the on-state and off-state of the transistor. The drain and source terminals are then connected to the electrical circuit in which the MOSFET is being used. This type of transistor also features a continuous drain-source on-state voltage of 60V.

Apart from the basic features mentioned above, IRLR024TRPBF also features very low RDS(on) resistance. This means that it has very low power dissipation and can be used in applications that require low power dissipation. Additionally, it is also designed with a low input capacitance and a high switching speed. This makes it very suitable for applications that require fast switching.

Overall, IRLR024TRPBF is a highly versatile MOSFET that is suitable for a large number of applications. It has a three-terminal structure with a continuous drain-source on-state voltage of 60V and can function in both the on-state and off-state. It also features very low RDS(on) resistance and a high switching speed, which makes it ideal for applications that require high speed. Additionally, it is widely available in many factories, which makes it very accessible for anyone looking to purchase it.

The specific data is subject to PDF, and the above content is for reference

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