IRLR3103TRRPBF Allicdata Electronics
Allicdata Part #:

IRLR3103TRRPBF-ND

Manufacturer Part#:

IRLR3103TRRPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 30V 55A DPAK
More Detail: N-Channel 30V 55A (Tc) 107W (Tc) Surface Mount D-P...
DataSheet: IRLR3103TRRPBF datasheetIRLR3103TRRPBF Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 1V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 107W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 19 mOhm @ 33A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The IRLR3103TRRPBF is a high-voltage power MOSFET transistor with a drain-source maximum voltage rating of 100 V. It comes in an insulated TO-220AB package and a drain current rating of 3A. It offers an extremely low on-resistance of 0.06 ohms and can handle a continuous drain current of 3A. This makes it ideal for high frequency switching applications in noise sensitive and high-voltage environments, such as those in automotive and industrial applications.

The IRLR3103TRRPBF is a depletion-mode, normally-on device. It has an intrinsic source-drain diode to absorb negative-going voltage transients and prevent excess current flow. This also makes it ideal for applications where the device must stay in an active, conducting state, as in most high frequency switching applications. The IRLR3103TRRPBF also features excellent gate charge, making it quicker for high frequency switching and provides superior avalanche energy handling capability.

The IRLR3103TRRPBF is an ideal choice for numerous applications such as motor drivers, H-bridge drivers, switching power supplies, and Class D amplifiers. It can also be used in automotive applications such as fuel injector drivers, airbag circuits, and ABS brakes. Its capabilities also make it a suitable choice for low-noise audio amplifiers, DC-DC converters, and Class-D speaker amplifiers.

The IRLR3103TRRPBF is designed to operate in the threshold voltage range normally associated with N-channel MOSFETs. When the gate voltage is below the threshold voltage, the MOSFET will be in a non-conducting, cutoff state. When the gate voltage exceeds the threshold voltage, the MOSFET will turn on and conduct. This switching action is a very simple and efficient way to control power and voltage in high frequency circuits. The on-resistance also helps reduce switching losses.

The IRLR3103TRRPBF is highly efficient for high frequency and low noise applications. It has a very low threshold voltage, fast switching times, and an excellent avalanche energy handling capability, which helps reduce the complexity of designing circuits in high voltage and noise sensitive environments. Its insulated TO-220AB package helps reduce thermal resistance, allowing for more power dissipation with improved reliability for safer operation.

In summary, the IRLR3103TRRPBF is a high voltage MOSFET transistor with a drain maximum voltage rating of 100 V and an on-resistance of 0.06 ohms. It is a depletion-mode, normally-on device with an intrinsic source-drain diode to absorb negative-going voltage transients and prevent excess current flow. It is highly suitable for applications requiring fast switching times and low noise, such as motor drivers, H-bridge drivers, Class D amplifiers, and DC-DC converters. Its insulated TO-220AB package helps reduce thermal resistance, allowing for more power dissipation with improved reliability for safer operation.

The specific data is subject to PDF, and the above content is for reference

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