IRLR3714TRPBF

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An IRLR3714TRPBF is a MOSFET, or metal oxide semiconductor field-effect transistor. It is a type of field-effect transistor intended for use in applications that contain high currents and high power. MOSFETs are used in a wide range of devices, including power supply units, audio amplifiers, switch mode power supplies and loudspeakers.

The IRLR3714TRPBF is a single-channel, n-channel enhancement-mode power MOSFET. It features an enhanced cell design which offers superior switching performance and ultra-low gate charge when compared to 2nd generation products. This MOSFET is designed specially for high-side load switch applications such as in Smartphone AC-DC converters, TVs, AD converters and TV/PC CPUs or for PFC applications.

This single-channel, n-channel enhancement-mode power MOSFET offers a low level of on-resistance, which reduces power loss during switching and helps to improve efficiency. It can achieve a maximum drain current of 36 amperes and a maximum drain-source voltage of 40 volts in the linear region.

The IRLR3714TRPBF is an ideal choice for high-side load switch applications, such as in Smartphone AC-DC converters, TVs, AD converters and TV/PC CPUs or for PFC applications. It is also suitable for use in power management and regulators, hard-switched and high frequency circuits, electronic motor drives, network and telecom power supplies, AC adapters, DC-DC converters, and portable devices.

The IRLR3714TRPBF has a wide variety of features which make it unique among other MOSFETs. It has an ergonomically advanced trench-gate design for low input capacitance and switching losses. It also offers an industry-leading on-resistance specification, making it suitable for applications requiring high levels of current. Additionally, it has low output capacitance, which reduces drain-to-source ringing and switching losses, helping to achieve the maximum power dissipation of the device.

The IRLR3714TRPBF has a working principle wherein an electric current flowing through the gate creates an electric field, which generates an electric force which modulates the flow between the source and the drain. When the voltage applied at the gate is increased, the MOSFET will let more current pass, and when it is decreased, the MOSFET will reduce the current. This is known as gate modulation technology.

The IRLR3714TRPBF has a wide range of applications that include high-side load switch applications such as in Smartphone AC-DC converters, TVs, AD converters and TV/PC CPUs or for PFC applications, as well as other applications that require high levels of power. Additionally, this device can be used in power management and regulators, hard-switched and high frequency circuits, electronic motor drives, network and telecom power supplies, AC adapters, DC-DC converters, and portable devices.

The IRLR3714TRPBF is a reliable and high-performance MOSFET designed for use in applications that contain high currents and high power. It has an ergonomically advanced trench-gate design for low input capacitance and switching losses and offers an industry-leading on-resistance specification and a maximum drain current of 36 amperes and a maximum drain-source voltage of 40 volts in the linear region. This single-channel, n-channel enhancement-mode power MOSFET is an ideal choice for high-side load switch applications, as well as a wide range of other applications.

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